Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T15:41:15.588Z Has data issue: false hasContentIssue false
  • English
  • Français

Semimetal-Semiconductor Transitions in Semimetal Bismuth-Antimony Nanowires Induced by Size Quantization, Strain, and Magnetic Field

Published online by Cambridge University Press:  25 July 2011

Albina A. Nikolaeva ,
Leonid A. Konopko ,
Tito E. Huber ,
Pavel P. Bodiul ,
Ivan A. Popov  and
Eugen F. Moloshnik
Albina A. Nikolaeva
Affiliation:
Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova, Academiei str. 3/3, MD-2028 Chisinau, Republic of Moldova International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland
Leonid A. Konopko
Affiliation:
Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova, Academiei str. 3/3, MD-2028 Chisinau, Republic of Moldova International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland
Tito E. Huber
Affiliation:
Department of Chemistry, Howard University, 500 College St. N.W., DC 20059 Washington, U.S.A.
Pavel P. Bodiul
Affiliation:
Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova, Academiei str. 3/3, MD-2028 Chisinau, Republic of Moldova
Ivan A. Popov
Affiliation:
Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova, Academiei str. 3/3, MD-2028 Chisinau, Republic of Moldova
Eugen F. Moloshnik
Affiliation:
Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova, Academiei str. 3/3, MD-2028 Chisinau, Republic of Moldova
Get access

Abstract

In this work, we study glass-coated single-crystal Bi98Sb02 wires obtained by liquid phase casting.

Semimetal Bi98Sb02 nanowires exhibited a "semiconductor" behavior of the temperature dependence R(T) for wire diameters <400 nm, which is significantly higher than the critical diameter (70 nm) for similar dependences R(T) of pure bismuth nanowires. The thermopower sign reversal in the temperature dependence α(T) was found to depend on the wire diameter d. The effect is interpreted in terms of manifestation of the quantum size effect, based on the appearance a new scattering channel stimulated by fluctuations in the diameter d.

The effect of negative magnetoresistance in a perpendicular magnetic field was observed for the first time both at H | | C3 and H | | C2 in magnetic fields of 1 T.

It is shown that a semimetal-semiconductor transition can be controlled using an elastic strain and a strong magnetic field, which lead to a significant shift of the band boundaries of the energy extrema in the bands

Keywords

semiconductingthermoelectricitynanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1350: Symposium EE – Semiconductor Nanowires—From Fundamentals to Applications , 2011 , mrss11-1350-ee10-10
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Thomas, C.B., and Goldsmid, H.I., J. Phys. Lett., 27A, N6, 369 (1968).Google Scholar
2. Ivanov, G.A., Kulikov, V.A., Naletov, V.L., Panarin, A.F., Repel, A.R., FTP, 6, 1296 (1972).Google Scholar
3. Anatychuk, L.I., J. of Thermoelectrisity, 2, 348 (2005).Google Scholar
4. Falkovskii, L.A., UFN, 94, 3 (1988).Google Scholar
5. Oelgard, G., Schneider, G., Kraak, W., Herrmann, R., J. Phys. St. Sol. (b), 74, N1, k75 (1976).Google Scholar
6. Golin, St., J. Phys. Rev., 176, N3, 830 (1968).Google Scholar
7. Lerner, L.S., Cuff, K.F., Williams, L.R., J. Rev. of Mod. Phys., 40, N4, 770 (1968).Google Scholar
8. Brandt, N.B., Dittman, H., Ponomarev, Ya.G., FTT, 15 824 (1973).Google Scholar
9. Brandt, N.B., Muller, R., Ponomarev, Ya.G., JETP, 71, 2268 (1976).Google Scholar
10. Lin, Yu-Mong, Sun, X., and Dresselhaus, M.S., J. Phys. Rev. B, 62, N7, 4610 (2000).Google Scholar
11. Hicks, L.D., and Dresselhaus, M.S., J. Phys. Rev. B, 47, 15631 (1993).Google Scholar
12. Rabin, O., Lin, Yu-Ming, and Dresselhaus, M. S., J. Phys. Rev. B, 79, N1, 81 (2001).Google Scholar
13. Lin, Yu-Ming, Rabin, O., Cronin, S.V., Ying, Jackie Y., and Dresselhaus, M.S., J. Appl. Phys. Lett., 81, N13, 2403 (2002).Google Scholar
14. Tavger, B.A., Demihovskii, V.Ya., UFN, 96, 61 (1968).Google Scholar
15. Brand, N.B., Gitsu, D.V., Nikolaeva, A.A., and Ponomarev, Ya.G., Zh. Exp. Teor. Fiz., 72, 2332 (1977) ( Sov. Phys. JETP, 45 (6) 1977).Google Scholar
16. Gitsu, D., Konopko, L., Nikolaeva, A. and Huber, T., J. App. Phys. Lett., 86, 10210 (2005).Google Scholar
17. Edelman, V.S., Sov. Phys. JETP, 64, N51734 (1973).Google Scholar
18. Sineavskiy, E.P., Solovenko, V.G., Nikolaeva, A.A., Konopko, L.A., Huber, N.E., J. of Thermoelectricity, 3, 51, (2007).Google Scholar
19. Pshenai-Severin, D.A., Ravich, Yu.I., FTP, 36, N8, 974 (2002).Google Scholar
20. Lifshits, I.M., 38, 5, 1569 (1960).Google Scholar
21. Khamidullin, R.·Brusenskaya, E.·Konopko ·, L. Nikolaeva, A.·Tsurkan, A., J Low Temp Phys, 158, 536 (2010).Google Scholar