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Semiconductor-metal Phase Transition in Doped Ion Beam Synthesized VO2 Nanoclusters

Published online by Cambridge University Press:  31 January 2011

Helmut Karl ,
J. Dreher  and
B. Stritzker
Helmut Karl
Affiliation:
[email protected], Universität Augsburg, Institut für Physik, Augsburg, Germany
J. Dreher
Affiliation:
[email protected], Universität Augsburg, Institut für Physik, Augsburg, Germany
B. Stritzker
Affiliation:
[email protected], Universität Augsburg, Institut für Physik, Augsburg, Germany
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Abstract

We have synthesized W and Mo doped VO2 nanoclusters embedded in 200 nm thick thermally grown SiO2 on 4-inch silicon wafers by sequential ion implantation of the elements V, W, Mo and O. The implantation energies have been chosen to locate the mean projected range in the centre of the SiO2 thin film. A post implantation rapid thermal annealing step in flowing Ar at 1000°C for 10 min leads to the growth of doped VO2 nanoclusters. The optical properties of the nanoclusters were analyzed by temperature dependent spectral ellipsometry in the spectral range of 320 to 1700 nm. It will be shown, that the semiconductor-metal phase transition hysteresis width starting at 50K in the undoped case can be systematically closed by increasing dopand concentration.

Keywords

nanostructureion-implantationphase transformation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1174: Symposium V – Functional Metal-Oxide Nanostructures , 2009 , 1174-V06-35
Copyright
Copyright © Materials Research Society 2009

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