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Semiconductor Thin Films Grown by Laser Photolysis

Published online by Cambridge University Press:  15 February 2011

J.G. Eden ,
J.E. Greene ,
J.F. Osmundsen ,
D. Lubben ,
C.C. Abele ,
S. Gorbatkin  and
H.D. Desai
J.G. Eden
Affiliation:
University of Illinois, Urbana, IL 61801
J.E. Greene
Affiliation:
University of Illinois, Urbana, IL 61801
J.F. Osmundsen
Affiliation:
University of Illinois, Urbana, IL 61801
D. Lubben
Affiliation:
University of Illinois, Urbana, IL 61801
C.C. Abele
Affiliation:
University of Illinois, Urbana, IL 61801
S. Gorbatkin
Affiliation:
University of Illinois, Urbana, IL 61801
H.D. Desai
Affiliation:
University of Illinois, Urbana, IL 61801
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Abstract

Thin (< 1.2 μpm) Ge and Si films have been grown with rates up to 3.6 μm/hr by laser-induced chemical vapor deposition (LCVD) on a variety of substrates. Germanium films grown on amorphous SiO2 (quartz) by photodissociating GeH4 in He at 248 nm (KrF laser) exhibit grain sizes of 0.3 – 0.5 μm that increase only slightly up to the pryolytic threshold for GeH4 (280°C). On (100) NaCl, however, Ge films grown at a substrate temperature of 120°C are expitaxial. The activation energy for the LCVD growth of Ge films (from GeH4) on SiO2 is measured to be 85 ± 20 meV which suggests that germanium is arriving at the substrate in atomic form. The wavelength and intensity dependence of the initial film growth rate supports the conclusion that this process is photolytic and is initiated by the absorption of a single photon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 185
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

1. Ehrlich, D.J., Osgood, R.M. Jr. and Deutsch, T.F., IEEE J. Quant. Electron. QE–16, 1233 (1980).CrossRefGoogle Scholar
2. Hanabusa, M., Namiki, A. and Yoshihara, K., Appl. Phys. Lett. 35, 627 (1979).CrossRefGoogle Scholar
3. Andreatta, R.W., Abele, C.C., Osmundsen, J.F., Eden, J.G., Lubben, D. and Greene, J.E., Appl. Phys. Lett. 40, 183 (1982).CrossRefGoogle Scholar
4. Boyer, P.K., Roche, G.A., Ritchie, W.H. and Collins, G.J., Appl. Phys. Lett. 40, 716 (1982).CrossRefGoogle Scholar
5. Bond Dissociation Energies in Simple Molecules, B. deB. Darwent, ed., NSRDS–NBS 31, National Bureau of Standards, Washington, DC, (1970), p. 31.Google Scholar
6. Kim, K.C., Setser, D.W. and Bogan, C.M., J. Chem. Phys. 60, 1837 (1974).CrossRefGoogle Scholar
7. Hargis, P.J. Jr., Appl. Opt. 20, 149 (1981);CrossRefGoogle Scholar
7a Hargis, P.J. Jr., and Kushner, M.J., Appl. Phys. Lett. 40, 779 (1982).CrossRefGoogle Scholar