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SEMICONDUCTOR QUANTUM-WELL HETEROSTRUCTURES

Published online by Cambridge University Press:  28 February 2011

L. L. Chang
L. L. Chang*
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

Activities in semiconductor heterostructures are reviewed, with focus on the fundamental physics aspects in the quantum regime and with emphasis on recent experimental observations. The GaAs-GaAlAs is used to illustrate the general electronic properties of interest, which are obtained through various measurement techniques. Other heterostructures, including III-V, II(IV)-VI, and IV materials, are covered to the extent that they exhibit new and specific features.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 267
Copyright
Copyright © Materials Research Society 1986

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