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Semiconductor Epitaxy and Bandgap Engineering by Pulsed Laser Ablation

Published online by Cambridge University Press:  16 February 2011

Jeff T. Cheung  and
H. Sankur
Jeff T. Cheung
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
H. Sankur
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
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Introduction

Recently, Pulsed Laser Ablation [1] has been receiving much attention as a viable thin film deposition technique due to its success in demonstrating excellent high Tc superconducting thin films, although the use of laser radiation as an external energy source to vaporize materials for vacuum deposition was first carried out more than twenty five years ago [2].Most of the early work was focused on dielectric films, a few sporadic reports on III-V compounds [3], some investigations on II-V compounds [4] and elemental semiconductors [5]. Since material qualities were inferior to those grown by Molecular Beam Epitaxy (MBE) at that time, this area of work was largely ignored. After further refinement, the quality of semiconductor films grown by Pulsed Laser Ablation is now comparable to those by MBE, most notably in HgCdTe, CdTe, their superlattices [6] as well as Ge epitaxy [7].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 191: Symposium N – Laser Ablation for Materials Synthesis , 1990 , 11
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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