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Self-Organized GaN/AlN Superlattice Nanocolumn Crystals Grown by RF-MBE

Published online by Cambridge University Press:  01 February 2011

Kouji Yamano ,
Akihiko Kikuchi  and
Katsumi Kishino
Kouji Yamano
Affiliation:
Department of Electrical and Electronics Engineering, Sophia University, 7–1 Kioi-cho, Chiyoda-ku, Tokyo 102–8554, JAPAN.
Akihiko Kikuchi
Affiliation:
Department of Electrical and Electronics Engineering, Sophia University, 7–1 Kioi-cho, Chiyoda-ku, Tokyo 102–8554, JAPAN.
Katsumi Kishino
Affiliation:
Department of Electrical and Electronics Engineering, Sophia University, 7–1 Kioi-cho, Chiyoda-ku, Tokyo 102–8554, JAPAN.
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Abstract

GaN nanocolumns including a GaN/AlN superlattice (SL) region were grown by rf-plasma assisted molecular beam epitaxy. The photoluminescence (PL) peak intensity of the GaN/AlN SL nanocolumns was 300∼500 times stronger than that of conventional GaN continuous films with a dislocation density of 3∼5×109 cm−2 and thickness of 3.75 μm grown by metalorganic chemical vapor deposition (MOCVD). The peak wavelengths of the GaN (10.2 ML)/AlN (15.2 ML) SL and GaN (7.7 ML)/AlN (12.4 ML) SL were 420 and 380 nm, respectively. The theoretically calculated transition wavelength agreed well with experimental values, suggesting that GaN/AlN SL nanocolumns involve a large built-in electrostatic field of about 5.8 MV/cm. The effect of the surface morphology of nanocolumns on the PL intensity was studied using GaN/AlN SL nanocolumns with different surface morphologies but with the same nanocolumn structure. Integrated PL intensity was increased by a factor of 2.2 upon changing the surface morphology from continuous to columnar.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.39
Copyright
Copyright © Materials Research Society 2005

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References

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