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Self-Interstitial Supersaturation During Ostwald Ripening of End-of-Range Defects in Ion-Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

M. Seibt
M. Seibt*
Affiliation:
IV. Physikalisches Institut der Georg-August Universität Göttingen and Sonder-forschungsbereich 345, Bunsenstr.13-15, D-37073 Göttingen, Federal Republic of Germany
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Abstract

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows to compare the time dependent self-interstitial supersaturation during postimplantation annealing in the presence of Frank-type stacking faults with that in the presence of {311} - defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 109
Copyright
Copyright © Materials Research Society 1996

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References

[1] Jones, K.S., Prussin, S., and Weber, E.R., Appl. Phys. A 45, 1 (1988)Google Scholar
[2] Seibt, M., Imschweiler, J. and Hefner, H.-A., in: Semiconductor Silicon 1994, Huff, H.R., Bergholz, W. and Sumino, K. (eds.), (The Electrochem. Soc., Pennington 1994), p. 72 0 Google Scholar
[3] Bonafos, C., Alquier, D., Martinez, A., Mathiot, D., and Claverie, A., Nucl.Instr.Meth.B, (1995), in pressGoogle Scholar
[4] Lambert, J.A. and Dobson, P.S., Phil. Mag. 44, 1043 (1981)Google Scholar
[5] Cerofolini, G.F., Meda, L., Polignano, M., Ottaviani, M.L., Bender, G., Clays, C., Armigliato, A., and Solmi, S., in Semiconductor Silicon 1986, (The Electrochem. Soc. Pennington 1986), p.706 Google Scholar
[6] Eaglesham, D.J., Stolk, P.A., Gossmann, H.-J., and Poate, J.M. Appl. Phys. Lett. 65, 2305 ((1994))Google Scholar
[7] Cowern, N.E.B., van de Walle, G.A., Zalm, P.C., and Vandenhout, D.W.E., Appl. Phys. Lett. 65, 2981 ((1994))Google Scholar
[8] Jones, K.S. and Venables, D., J. Appl. Phys. 69, 2931 (1991)Google Scholar
[9] Eaglesham, D.J., Stolk, P.A., Cheng, J.-Y., Gossmann, H.-J., Haynes, T.E., and Poate, J.M., Inst. Phys. Conf. Ser. No.146, 415 ((1995))Google Scholar
[10] Seibt, M. and Spiecker, E., Solid State Phenomena Vol.47–48, 205 (1995)Google Scholar
[11] The growth kinetis are valid for a plate-shaped precipitate of constant thickness which grows exclusively by incorporation of atoms via the bounding dislocation.Google Scholar
[12] Flynn, C.P., Point Defects and Diffusion, (Clarendon Press, Oxford 1972)Google Scholar
[13] Seidel, T.E., Lischner, D.J., Pai, C.S., Knoell, R.V., Maher, D.M. and Jacobson, D.C., Nucl. Instr. and Meth. B 7/8, 251 (1985)Google Scholar
[14] This approximation holds after an initial transient τ of the order of τ ≅ d 2 /D 1 . During this transient SiI diffusion into the bulk will be of the same order of magnitude as transport into the bulk. At larger times the steeper concentration gradient towards the surface dominates. For typical values of d (≅ 100nnm) and DI (> 10−1 cm 2 /s)τ is less than 1s.+10−1+cm+2+/s)τ+is+less+than+1s.>Google Scholar
[15] For simulations the following parameters are used: s0= 1 (inert ambient), ν = 0.215, G = 6.4ċ10 Nm−2, Rc=b/4, b=0.31nm γ=0.026eV/atom, σ = 6.4ċ10−16 cm2. Initial size distribution functions are assumed to be Gaussian with an average radius of < r >= 5ċb and a width of Δr = b=+5ċb+and+a+width+of+Δr+=+b>Google Scholar
[16] For simulating the behaviour of {311} -defects we use b=0.11nm, γ = 0.9eV/atom and σ= 1.8ċ10−15cm2 Google Scholar
[17] Takeda, S., and Kohyama, M., Inst. Phys. Conf. Ser. No.134, 33 (1993)Google Scholar
[18] Seibt, M., Imschweiler, J. and Hefner, H.-A., Mat. Res. Soc. Proc. Vol 316, 167 (1994)Google Scholar
[19] Bracht, H., Stolwijk, A., and Mehrer, H., in: Semiconductor Silicon 1994, Huff, H.R., Bergholz, W. and Sumino, K. (eds.), (The Electrochem. Soc., Pennington 1994), p.593 Google Scholar