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Self-Interstitial Injection Effects on Carbon Diffusion in Silicon At High Temperatures

Published online by Cambridge University Press:  28 February 2011

L. A. Ladd  and
J. P. Kalejs
L. A. Ladd
Affiliation:
Mobil Solar Energy Corporation, 16 Hickory Drive, Waltham, Massachusetts 02254, USA
J. P. Kalejs
Affiliation:
Mobil Solar Energy Corporation, 16 Hickory Drive, Waltham, Massachusetts 02254, USA
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Abstract

Carbon diffusivity is reported for different ambient conditions imposed during annealing of silicon in the temperature range from 800 to 100°C, which produce varying levels of silicon self-interstitial supersaturation. The diffusivities are deduced from SIMS analysis of carbon out-diffusion profiles. Carbon diffusivity is increased by up to a factor of 70 in annealing with phosphorus in-diffusion, and by a factor of as much as seven in an oxidizing ambient, when compared to anneals in a nitrogen ambient. The enhancements tend to decrease above 11000C. This behavior can be explained by attributing the increase in carbon diffusivity to self-interstitial supersaturation which increases the concentration of highly mobile carbon selfinterstitial pairs. Significant time dependent effects were also observed for 800 and 9000C phosphorus in-diffusion conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 445
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

[1] Ladd, L.A., Kalejs, J.P. and Gbsele, U., Mat. Res. Soc. Symp. Proc., 36, 89 (1985).Google Scholar
[2] Newman, R.C. and Wakefield, J., in: Metallurgy of Semiconductor Material, edited by Schroeder, J.B. (Interscience: New York; 1961), p. 201.Google Scholar
[3] Lin, A.M., Antoniadis, D.A. and Dutton, R.W., J. Electrochem. Soc., 128, 1131 (1983).Google Scholar
[4] This equation was used to fit the data but was incorrectly printed in Ref. [1].Google Scholar
[3] Feng, S.Q., Kalejs, J.P. and Ast, D.G., this symposium volume.Google Scholar
[6] Tan, T.Y. and Gösele, U., Appl. Phys. A, 37, 1 (1985).Google Scholar
[7] Mathiot, D. and Pfister, J.C., Appl. Phys. Lett., 47, 962 (1985).Google Scholar
[8] Shimura, F., Baiardo, J.P., and Fraundorf, P., Appl. Phys. Lett., 46, 41 (1985).CrossRefGoogle Scholar
[9] Gösele, U. and Tan, T.Y., Mat. Res. Soc. Proc., 36, 105 (1985).CrossRefGoogle Scholar