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Self-control Phenomenon for Crystallinity and Morphology Observed at Epitaxial Growth of BaTiO3 by Alternating Deposition Method

Published online by Cambridge University Press:  10 February 2011

K. Shimoyama ,
T. Kanda ,
M. Iida ,
T. Maeda  and
K. Yamabe
K. Shimoyama
Affiliation:
Institute of Materials Science, and Center for Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan, [email protected]
T. Kanda
Affiliation:
Institute of Materials Science, and Center for Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
M. Iida
Affiliation:
Institute of Materials Science, and Center for Tsukuba Advanced Research Alliance, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
T. Maeda
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan
K. Yamabe
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

We directly observed self-control crystallization of epitaxial BaTiO3 films during alternate depositions of BaO and TiO2. When TiO2 (or BaO) was supplied excessively, surface crystallinity and smoothness degraded due to three-dimensional (3D) growth. However, when the following BaO (or TiO2) was supplied onto the rough TiO2 (or BaO) surface, the surface smoothness was recovered drastically. It was found that a single phase BaTiO3 film grew by repeating the alternate deposition cycle of excessive supply of both BaO and TiO2. The mechanism of this phenomenon was discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 459
Copyright
Copyright © Materials Research Society 1999

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References

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