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Self-Assembled Monolayers as Model Substrates for Atomic LayerDeposition

Published online by Cambridge University Press:  17 March 2011

Caroline M. Whelan ,
Anne-Cécile Demas ,
Jörg Schuhmacher ,
Laureen Carbonell  and
Karen Maex
Caroline M. Whelan
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Anne-Cécile Demas
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Jörg Schuhmacher
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Laureen Carbonell
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Karen Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Department of Electrical Engineering, Katholieke Universiteit Leuven, Kasteelpark Arenberg 1, B-3001 Heverlee, Belgium
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Abstract

Our understanding of the role of the initial surface on atomic layerdeposition (ALD) of Cu diffusion barrier materials is limited by thecomplexity of the sequential reactions and the heterogeneous nature oftypical dielectric substrates. The atomically controlled surface chemistryof self-assembled monolayers (SAMs) provides a means of creating modelsubstrates for ALD. Here we report on ALD of WCxNyfilms on SAMs derived from bromoundecyltrichlorosilane adsorbed on silicondioxide. The as-prepared SAM is macroscopically ordered with the expectedBr-termination and has a well-defined chemical composition as determined bycontact angle measurements and X-ray photoelectron spectroscopy,respectively. Temperature programmed desorption spectroscopy confirms thatthe SAM is stable to 550°C. It survives multiple cycles of ALD at 300°C asevidenced by the detection of mass fragments characteristic of the alkylchain and supported by the persistence of a Br 2p peak at 71 eV. X-rayfluorescence, ellipsometry and atomic force microscopy reveal that theunderlying SAM influences WCxNy film coverage, thickness, andmorphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F2.2
Copyright
Copyright © Materials Research Society 2004

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