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Self-assembled Ge quantum dots on SiC substrates grown by UHV-CVD

Published online by Cambridge University Press:  11 February 2011

C. Calmes ,
V. Le ,
D. Bouchier ,
S. E. Saddow ,
V. Yam ,
D. Débarre ,
R. Laval  and
C. Clerc
C. Calmes
Affiliation:
Institut d'Electronique Fondamentale, UMR-CNRS 8622, bât. 220, Université Paris-Sud, 91405 ORSAY Cedex (France)
D. Bouchier
Affiliation:
Institut d'Electronique Fondamentale, UMR-CNRS 8622, bât. 220, Université Paris-Sud, 91405 ORSAY Cedex (France)
S. E. Saddow
Affiliation:
Institut d'Electronique Fondamentale, UMR-CNRS 8622, bât. 220, Université Paris-Sud, 91405 ORSAY Cedex (France)
V. Yam
Affiliation:
Institut d'Electronique Fondamentale, UMR-CNRS 8622, bât. 220, Université Paris-Sud, 91405 ORSAY Cedex (France)
D. Débarre
Affiliation:
Institut d'Electronique Fondamentale, UMR-CNRS 8622, bât. 220, Université Paris-Sud, 91405 ORSAY Cedex (France)
R. Laval
Affiliation:
Institut d'Electronique Fondamentale, UMR-CNRS 8622, bât. 220, Université Paris-Sud, 91405 ORSAY Cedex (France)
C. Clerc
Affiliation:
Institut d'Electronique Fondamentale, UMR-CNRS 8622, bât. 220, Université Paris-Sud, 91405 ORSAY Cedex (France)
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Abstract

We report our first results using a ultra high vacuum chemical vapor deposition (UHV-CVD) system to form Ge quantum dots on off-axis SiC substrates. Pure SiH4 and hydrogen-diluted GeH4 were used as gas precursors. The SiC substrates were chemically cleaned using the modified RCA process and the SiO2 layer was removed in-situ under a low SiH4 flow rate at a temperature between 1030°C and 1080°C. The Ge quantum dots were grown at a temperature of 750°C. In-situ reflection high-energy electron diffraction (RHEED) was used to monitor the surface cleaning and the Ge quantum dot growth. Ex-situ scanning electron microscope and atomic force microscopy were used to confirm the presence of Ge dots. The observed dots are smaller (350 Å width and 100 Å height) than similar Ge dots grown on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.20
Copyright
Copyright © Materials Research Society 2003

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References

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