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Self-Aligned Suicides for ULSI

Published online by Cambridge University Press:  25 February 2011

Karen Maex  and
Rob Schreutelkamp
Karen Maex
Affiliation:
IMEC, Kapeldreef75, 3001 Leuven, Belgium
Rob Schreutelkamp
Affiliation:
IMEC, Kapeldreef75, 3001 Leuven, Belgium
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Abstract

Since self-aligned suicides are beginning to be used routinely in integral ULSI processes, critical processing characteristics need to be investigated. In this paper, three relevant issues concerning processing are discussed, namely, the formation of ultra-thin suicides, the silicidation of laterally confined areas and the thermal stability of silicide/Si structures. The technological aspects of TiSi2 and COSi2 are discussed and related to their materials properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 133
Copyright
Copyright © Materials Research Society 1992

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References

REFErences

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