Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T01:44:44.921Z Has data issue: false hasContentIssue false
  • English
  • Français

Self-Aligned Suicides for ULSI

Published online by Cambridge University Press:  25 February 2011

Karen Maex  and
Rob Schreutelkamp
Karen Maex
Affiliation:
IMEC, Kapeldreef75, 3001 Leuven, Belgium
Rob Schreutelkamp
Affiliation:
IMEC, Kapeldreef75, 3001 Leuven, Belgium
Get access

Abstract

Since self-aligned suicides are beginning to be used routinely in integral ULSI processes, critical processing characteristics need to be investigated. In this paper, three relevant issues concerning processing are discussed, namely, the formation of ultra-thin suicides, the silicidation of laterally confined areas and the thermal stability of silicide/Si structures. The technological aspects of TiSi2 and COSi2 are discussed and related to their materials properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 133
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFErences

[1] Maex, Karen, Appl. Surf. Sci. 53, 328 (1991).Google Scholar
[2] Maex, K., De Keersmaecker, R. F., Ghosh, G., Delaey, L., and Probst, V., J. Appl. Phys. 66, 5327 (1989).Google Scholar
[3] Probst, V., Schaber, H., Mitwalsky, A., Kabza, H., Hofmann, B., Maex, K. and Van den hove, L., J. Appl. Phys. 70, 693 (1991).Google Scholar
[4] Beyers, R., Coulman, B. and Merchant, P., J. Appl. Phys. 61, 5110 (1987).Google Scholar
[5] Mann, R. W., Racine, C. A., and Bass, R. S., Mat. Res. Soc. Symp. Proc. 224, 115 (1991).Google Scholar
[6] Nemanich, R. J., Jeon, H., Sukow, C. A., Honeycutt, J. W., and Rozgonyi, G. A., these proceedings.Google Scholar
[7] Vandenabeele, P., Schreutelkamp, R. J., Maex, K., Vermeiren, C., and Coppye, W., these proceedings.Google Scholar
[8] Schreutelkamp, R. J., Vandenabeele, P., Deweerdt, B., Coppye, W., Vermeiren, C., Lauwers, A., and Maex, K., these proceedings.Google Scholar
[9] Norström, H., Maex, K. and Vandenabeele, P., Mat. Res. Soc. Symp. Proc. 182, 71(1990).Google Scholar
[10] Norström, H., Maex, K., Romano-Rodriguez, A., Vanhellemont, J. and Van den hove, L., Micro-Electronic Engineering 14, 327 (1991).Google Scholar
[11] Lithomap, Trademark of Prometrix Corp., 3255 Scott Blvd., Bldg. 6, Santa Clara, CA 95054, USA.Google Scholar
[12] Norström, H., Maex, K. and Vandenabeele, P., Thin Solid Films, 198, 53 (1991).Google Scholar
[13] Schreutelkamp, R. J., Deweerdt, B., Verbeeck, R. and Maex, K., European Solid State Device and Research Conference (ESSDERC), Leuven, Belgium, Sept. 1992, to be published in the proceedings.Google Scholar