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Selective-Area Epitaxy and In-Situ Etching of Gaas Using Tris- Dimethylaminoarsenic By Chemical Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

N. Y. Li  and
C. W. Tu
N. Y. Li
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92093–0407, [email protected]
C. W. Tu
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92093–0407, [email protected]
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Abstract

In this study, we shall first report selective-area epitaxy (SAE) of GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic (TDMAAs), a safer alternative source to arsine (AsH3), as the group V source. With triethylgallium (TEGa) and TDMAAs, true selectivity of GaAs can be achieved at a growth temperature of 470°C, which is much lower than the 600°C in the case of using TEGa and arsenic (As4) or AsH3. Secondly, we apply SAE of carbon-doped AIGaAs/GaAs to a heterojunction bipolar transistor (HBT) with a regrown external base, which exhibits a better device performance. Finally, the etching effect and the etched/regrown interface of GaAs using TDMAAs will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 15
Copyright
Copyright © Materials Research Society 1996

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