Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T02:07:53.487Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Surface Modification of Fluorocarbon Resin Using Excimer Laser

Published online by Cambridge University Press:  21 February 2011

M. Okoshi ,
M. Murahara  and
K. Toyoda
M. Okoshi
Affiliation:
Graduate Student of Faculty Eng., Tokai University
M. Murahara
Affiliation:
Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259-12, Japan
K. Toyoda
Affiliation:
RIKEN, The Institute of Physical and Chemical Research, 2-1 Hirokawa, Wako, Saitama, 351-01, Japan
Get access

Abstract

The fluorocarbon resin (Teflon) which is a very stable material chemically, has chemical resistance. Because of this property, it has no affinity for oil or water. Therefore, we have tried selective area modification of the resin surface b-y using an excimer laser.

Fluorocarbon resin is a polymer of C-F bonds. In our experiment, the resin surface was irradiated by an ArF excimer laser, of which the photon energy is higher than that of the C-F bond, to excite the strong C-F bonds. B radicals, the best combination for F atoms, were formed simultaneously. Consequently, F atoms of C-F bonds were pulled out by B radicals. B(CH3 )3 with absorption in agreement with the wavelength of the ArF laser were used as raw materials of the B radicals. By irradiating the gas by the ArF laser beam, the photodecomposed B radicals functioned by pulling out F atoms, and the other methyl radicals ( -CH3 ) substituted for F atoms. As the result, this resin surface turned out to be oleophilic exclusively on the areas exposed to the light.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 33
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Burkstrand, J.H., J.Appl.Phys. 52, 1981 Google Scholar
2. Küper, S. and Stuke, M., Appl.Phys.Lett. 54, 4 (1989)Google Scholar
3. Srinivasan, R. and Mayne-Banton, V., Appl.Phys.Lett. 41, 576(1982)Google Scholar
4. Okoshi, M.,.Sugawara, N., Shigeeda, T., Murahara, M. and Toyoda, K., Extend Abstract (The 36th Spring Meeting, 1989) The Japan Society of Applied Physics No.2, 593 (1989)Google Scholar
5. Sugawara, N., Takahashi, R., Okoshi, M. and Murahara, M., Extend Abstract (The 36th Spring Meeting, 1989) The Japan Society of Applied Physics No.2, 593 (1989)Google Scholar
6. Hayashi, M., Okoshi, M., Shigeeda, T., Murahara, H. and Toyoda, K., Extend Abstract (The 50th Autumn Meeting, 1989) The Japan Society of Applied Physics No.2, 511 (1989)Google Scholar
7. Okoshi, M., Tanaka, K., Murahara, M., Extend Abstract (The 50th Autumn Meeting, 1989) The Japan Society of Applied Physics No.2, 511 (1989)Google Scholar