Hostname: page-component-77c89778f8-sh8wx Total loading time: 0 Render date: 2024-07-16T13:58:14.725Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Rapid Thermal Cvd of Germanium

Published online by Cambridge University Press:  21 February 2011

D.T. Grider ,
M.C. Özttürk ,
J.J. Wortman ,
M.A. Littlejohn ,
Y. Zhong ,
D. Batchelor  and
P. Russell
D.T. Grider
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
M.C. Özttürk
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
J.J. Wortman
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
M.A. Littlejohn
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
Y. Zhong
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
D. Batchelor
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
P. Russell
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
Get access

Abstract

Selective depositions of germanium thin films have been investigated in a cold-wall, lamp heated rapid thermal processor. Films were deposited at low pressures (1 Torr-8 Torr) using the thermal decomposition of germane. Selectivity was maintained throughout the temperature range investigated, 350°C-600°C. Growth rates as high as 800 Å/min were obtained at 425°C where deposition is controlled by the surface reactions, making germanium compatible with the throughput requirements of single wafer manufacturing. Three dimensional growth was seen at temperatures above 450°C resulting in a rough surface morphology. Smooth films were deposited below 450°C with the films characterized by two dimensional growth. In this work, germanium is considered as a potential material to fabricate MOS transistors with raised source and drain junctions (UPMOS). Kelvin structures were fabricated to study the effect of the intermediate germanium layer between aluminum and silicon on contact resistance. It is shown that contact resistivity is improved by approximately 17% using an Al/p-Ge/p+-Si structure. In this work, it is also shown that titanium germanide formation can be used as a means of reducing the resistivity of the Ge buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 147
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Singh, R.. Journal of Applied Physics, 6 (8), R59–R114 (1988).Google Scholar
[2] Gronet, C.M., King, C.A., Gibbons, J.F.. MRS Symposia Proceedings, 141, 107–112 (1986).Google Scholar
[3] Bums, G.P., Wilkes, J.G.. Semiconductor Science Technology, 3, 442–447 (1988).Google Scholar
[4] Öztirk, M.C., Wortman, J.J., Zhong, Y., Ren, X., Miller, R., Johnson, F.S., Grider, D.T., Abercrombie, D.A.. MRS Symposia Proceedings, 146, 109–114 (1989).Google Scholar
[5] Johnson, F.S., Miller, R.M., Oztiirk, M.C., Wortman, J.J.. MRS Symposia Proceedings, 146, 345–350 (1989).Google Scholar
[6] Miller, R.M., Öztürk, M.C., Wortman, J.J., Johnson, F.S., Grider, D.T.. Accepted for publication in Materials Letters.Google Scholar
[7] Öztiirk, M.C., Grider, D.T., Wortman, J.J., Littlejohn, M.A., Zhong, Y., Batchelor, D., Russell, P., “New Applications of Germanium in ULSI Technologies”. To be published.Google Scholar
[8] Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S., Robinson, I.K.. Journal of Vacuum Science Technology, A2 (2), 436–440 (1984).Google Scholar
[9] Iyer, S.S, Patton, G.L., Stork, J.M.C., Meyerson, B.S., Harame, D.L.. IEEE Transactions on Electron Devices, 36 (10), 2043–2064 (1989).Google Scholar
[10] Hove, L. VanDen, Wolters, R., Maex, K., DeKeersmaecker, R.F., DeClerck, G.J.. IEEE Transactions on Electron Devices, 34 (3), 554–561 (1987).Google Scholar
[11] Shibata, H., Suizu, Y., Samata, S., Matsuno, T., Hashimoto, K.. International Electron Device Meeting, 590–593 (1987).Google Scholar
[12] Öztfilrk, M.C., Wortman, J.J., Grider, D.T., Zhong, Y., Johnson, S.. Presented at Electronic Materials Conference, Cambridge, MA, June 21-23, 1989.Google Scholar
[13] Tsaur, B.Y., Geis, M.N., Fan, J.C.C., Gale, R.P.. Applied Physics Letters, 31 (10), 779–781 (1981).Google Scholar
[14] Kuech, T.F., Miidnpigi, M., Lau, S.S.. Applied Physics Letters, 39 (3), 245–247 (1981).Google Scholar
[15] Ishii, H., Takahashi, Y., Murota, J.. Applied Physics Letters, 47 (8), 863–865 (1985).Google Scholar
[16] Srinivasan, G.R.. Journal of Crystal Growth, 70, 201–217 (1984).Google Scholar
[17] deLanerolle, N., Hoffman, D., Ma, D.. Journal of Vacuum Science Technology, B5 (6), 1689–1695 (1987).Google Scholar
[18] Broadbent, E.K., Ramiller, C.L.. Journal of Electrochemical Society: Solid State Science and Technology, 131 (6) 1427–1433 (1984).Google Scholar
[19] Cohen, S.S., Gildenblat, G., Ghezzo, M., Brown, D.M.. Journal of the Electrochemical Society: Solid-State Science and Technology, 126 (6), 1335–1338 (1982).Google Scholar
[20] Sze, S.M.. Physics of Semiconductor Devices, (John Wiley and Sons publishers, New York, New York 1981), p. 99, Eq. (99).Google Scholar
[21] Hove, L. Van Den. Ph-D Thesis, Katholieke Universteit Leuven, Belgium, (1988)Google Scholar