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Selective Oxidation to Form Dielectric Apertures for Low Threshold VCSELs and Microcavity Spontaneous Light Emitters

Published online by Cambridge University Press:  10 February 2011

D. G. Deppe ,
D. L. Huffaker ,
L. A. Graham ,
Z. Zou  and
S. Csutak
D. G. Deppe
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, [email protected]
D. L. Huffaker
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, [email protected]
L. A. Graham
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, [email protected]
Z. Zou
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, [email protected]
S. Csutak
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, [email protected]
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Abstract

Selective oxidation of AlAs (or AlGaAs) can be used to form buried, low refractive index apertures within high Q Fabry-Perot microcavities. These apertures provide electrical and optical confinement, and for vertical-cavity surface-emitting lasers (VCSELs) have resulted in ultra-low threshold room temperature lasing with threshold currents under 25 μA. When used with quantum dot light emitters, the oxide-apertured microcavity can also be used to control the spontaneous lifetime. We describe the microcavity fabrication based on high Q Fabry-Perot microcavities and selective oxidation, and design and cavity Q constraints for apertured microcavities for quantum well and quantum dot VCSELs and microcavity LEDs. Threshold current densities of quantum well VCSELs are as low as 98 A/cm2, while ground state lasing is also obtained for quantum dot VCSELs. Our initial experiments on microcavities with very small apertures and quantum dot emitters demonstrate up to a factor of 2.3 increase in the spontaneous emission rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 81
Copyright
Copyright © Materials Research Society 1999

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References

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