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Selective Oxidation and Etching of Reacted Pt Films on Gaas

Published online by Cambridge University Press:  25 February 2011

Eliezer Weiss ,
Robert C. Keller ,
Margaret L. Kniffin  and
C.R. Helms
Eliezer Weiss
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
Robert C. Keller
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
Margaret L. Kniffin
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
C.R. Helms
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305.
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Abstract

The oxidation of prereacted Pt films on (100)-oriented n-GaAs substrates was studied in the temperature range between 550 and 750°C using Auger electron spectroscopy and Xe+ ion profiling. The GaPt/PtAs2/GaAs structure formed during annealing in hydrogen was oxidized using a mixture of water vapor and hydrogen. The GaPt phase can be oxidized completely, whereas the inner PtAs2 and GaAs interfaces are left unoxidized. The oxidation of the platinum-gallium phase is self limited by the diffusion of the Ga through the gallium oxide overlayer. The oxide can be etched off to leave a structure consisting only of platinum-arsenide on the GaAs substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 253
Copyright
Copyright © Materials Research Society 1990

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References

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