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Selective Nucleation and Growth of Large Grain Polycrystalline GaAs

Published online by Cambridge University Press:  01 February 2011

C. G. Allen ,
J. D. Beach ,
A. A. Khandekar ,
J. C. Dorr ,
C. Veauvy ,
R. T. Collins ,
T.F. Kuech ,
R. M. Caputo ,
R. E. Hollingsworth  and
C. K. Inoki
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C. G. Allen
Affiliation:
Physics Department, Colorado School of Mines, 1500 Illinois Golden, CO 80401, U.S.A.
J. D. Beach
Affiliation:
Physics Department, Colorado School of Mines, 1500 Illinois Golden, CO 80401, U.S.A.
A. A. Khandekar
Affiliation:
Department of Chemical Engineering, University of Wisconsin-Madison, 1415 Engineering Dr., Madison, WI 53706, U.S.A.
J. C. Dorr
Affiliation:
Physics Department, Colorado School of Mines, 1500 Illinois Golden, CO 80401, U.S.A.
C. Veauvy
Affiliation:
Physics Department, Colorado School of Mines, 1500 Illinois Golden, CO 80401, U.S.A.
R. T. Collins
Affiliation:
Physics Department, Colorado School of Mines, 1500 Illinois Golden, CO 80401, U.S.A.
T.F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin-Madison, 1415 Engineering Dr., Madison, WI 53706, U.S.A.
R. M. Caputo
Affiliation:
Physics Department, Colorado School of Mines, 1500 Illinois Golden, CO 80401, U.S.A.
R. E. Hollingsworth
Affiliation:
ITN Energy Systems Inc., 8130 Shaffer Parkway, Littleton, CO 80127-4107, U.S.A.
C. K. Inoki
Affiliation:
Physics Department, University at Albany, Albany, NY 12222, U.S.A.
T. S. Kuan
Affiliation:
Physics Department, University at Albany, Albany, NY 12222, U.S.A.
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Abstract

A method for depositing large grained polycrystalline GaAs on lattice mismatched substrates through controlled nucleation and selective growth is presented. The process was developed on Si wafers. Nucleation site formation began with nanolithography to create submicron holes in photoresist on Si. Ga metal was electrochemically deposited into the holes. Subsequent arsine anneals converted the gallium deposits into GaAs. Photoluminescence and electron diffraction verified conversion to GaAs. Metal-Organic Chemical Vapor Deposition (MOCVD) enlarged the seed crystals to coalescence without creating additional nucleation sites within the patterned field. Having successfully demonstrated the approach, subsequent work has been directed at lower cost, alternative ways to define initial nucleation sites, such as, microcontact lithography and direct decomposition of triethyl gallium to Ga metal in the MOCVD chamber.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 870: Symposium H – Giant-Area Electronics on Nonconventional Substrates , 2005 , H1.5
Copyright
Copyright © Materials Research Society 2005

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