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Selective Epitaxy as a Chemistry Free Route for Ybco Thin Film Patterning

Published online by Cambridge University Press:  01 January 1992

Hanns-Ulrich Habermeier
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr 1, W 7000 Stuttgart -80, Germany
Bentsian Elkin
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr 1, W 7000 Stuttgart -80, Germany
Gunter Beddies
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr 1, W 7000 Stuttgart -80, Germany
Bernd Leibold
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr 1, W 7000 Stuttgart -80, Germany
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Abstract

Two different routes for micropatterning of YBCO thin films by selective epitaxy are presented; both methods are based on the intermixing of YBCO with silicon at the growth temperature for ( 001 ) as well as ( hk0 ) YBCO thin film epitaxy. One method ( I ) uses a pre-patterned yttria stabilized zirconia [ YSZ ] thin film epitaxially grown on a silicon single crystal giving rise to the epitaxy of c-axis oriented YBCO on YSZ whereas intermixing yields a nonsuperconducting Si-Y-Ba--Cu-O phase elsewhere. The other method (II ) uses SrTiO3 substrates suitable for ( 103 ) as well as ( 110 ) YBCO epitaxy coated with a pre-patterned amorphous silicon layer prior to YBCO deposition. Both techniques are chemistry free routes for YBCO thin film patterningand pave the way for superconductor/semiconductor hybride device fabrication ( route I ) as well as basic investigations of the anisotropic electronic and optical properties of YBCO ( route II ).

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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