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Selective Area Omvpe Growth of GaInP on Patterned GaAs Substrates Using Semimetallic Amorphous Carbon Mask

Published online by Cambridge University Press:  21 February 2011

Keith L. Whittingham ,
Bobby L. Pitts ,
Gregory F. Redinbo  and
James R. Shealy
Keith L. Whittingham
Affiliation:
OMVPE Facility, School of Electrical Engineering, Cornell University, Ithaca, NY 14853
Bobby L. Pitts
Affiliation:
OMVPE Facility, School of Electrical Engineering, Cornell University, Ithaca, NY 14853
Gregory F. Redinbo
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
James R. Shealy
Affiliation:
OMVPE Facility, School of Electrical Engineering, Cornell University, Ithaca, NY 14853
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Abstract

In this study, we have investigated the effectiveness of semimetallic, amorphous carbon films as a liftoff mask in the selective growth, by OMVPE, of GaInP epitaxial layers, on (001) oriented GaAs substrates. Scanning electron microscopy, cathodoluminescence spectroscopy and EDX analysis have been employed to characterize the epitaxial material. Our results show excellent selectivity with little nucleation taking place on the amorphous carbon mask in the region of the patterned openings. Liftoff of the carbon mask was very easily achieved, leaving no unintentional nucleation on the substrate below. Investigations in the AlGaAs/GaAs system did not yield the same degree of selectivity with this mask, but the polycrystalline film that deposited on the mask was cleanly lifted from the substrate by the liftoff of the mask.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 55
Copyright
Copyright © Materials Research Society 1994

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