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Selective Area Chemical Vapor Deposition of Chromium Oxides

Published online by Cambridge University Press:  14 March 2011

Ruihua Cheng
Affiliation:
Department of Physics and Astronomy and the Center for Materials Research and Analysis (CMRA), Behlen Laboratory of Physics, University of Nebraska-Lincoln, NE 68588-0111, USA
C.N. Borca
Affiliation:
Department of Physics and Astronomy and the Center for Materials Research and Analysis (CMRA), Behlen Laboratory of Physics, University of Nebraska-Lincoln, NE 68588-0111, USA
P.A. Dowben
Affiliation:
Department of Physics and Astronomy and the Center for Materials Research and Analysis (CMRA), Behlen Laboratory of Physics, University of Nebraska-Lincoln, NE 68588-0111, USA, [email protected]
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Abstract

We demonstrate that two-phase CrO2 and Cr2O3 thin films can be grown by using selective organometallic chemical vapor deposition through the oxidation of Cr(CO)6 in an oxygen environment. While the magnetization measurements show that both chromium oxides are present, the relative weight of each phase depends on the oxygen partial pressure. Changes of the Curie temperature, Tc, and the saturation magnetization field may be possible by controlling the stoichiometry.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

BIBLIOGRAPHY

1. Bratkovsky, A.M., Phys. Rev. B. 56 (1997) p. 2344.10.1103/PhysRevB.56.2344Google Scholar
2. Manoharan, S.S., Elefant, D., Reiss, G. and Goodenough, J.B., Appl. Phys. Lett. 72 (1998) p. 984; X.W. Li, A. Gupta, T.R. McGuire, P.R. Duncombe, and Gang Xiao, J. Appl. Phys. 85 (1999) p. 5585; K. Suzuki and P.M. Tedrow, Phys. Rev. B. 58 (1998) p. 11597.10.1063/1.120616Google Scholar
3. Coey, J.D.M., Berkowitz, A.E., Balcells, Ll, Putris, F.F. and Barry, A., Phys. Rev. Lett. 80 (1998) p. 3815.10.1103/PhysRevLett.80.3815Google Scholar
4. Kouvel, J. S. and Rodbell, D. S., J. Appl. Phys. 38 (1967) p. 979.10.1063/1.1709710Google Scholar
5. Schwarz, K., J. Phys. 16 (1986) p. L211.10.1088/0305-4608/16/9/002Google Scholar
6. Matar, S., Demazeau, G., Sticht, J., Eyert, V., and Käbler, J., J. de Physique I 2 (1992) p. 315.Google Scholar
7. Korotin, M.A., Anisimov, V.I., Khomskii, D.I. and Sawatzky, G.A., Phys. Rev. Lett. 80 (1998) p.4305.10.1103/PhysRevLett.80.4305Google Scholar
8. Lewis, S.P., Allen, P.B., Sasaki, T., Phy. Rev. B 55 (1997) p. 10253.Google Scholar
9. Lueken, H. van and Groot, R.A. de, Phys. Rev. B 51 (1995) p. 7176.10.1103/PhysRevB.51.7176Google Scholar
10. Kulatov, E. and Mazin, I.I., J. Phys. Condens. Matter, 2 (1990) p. 343.10.1088/0953-8984/2/2/010Google Scholar
11. Kämper, K.P., Schmitt, W., Güntherodt, G., Gambino, R.J., and Ruf, R.. Phys. Rev. Lett., 59 (1987) p. 2788.10.1103/PhysRevLett.59.2788Google Scholar
12. Weisendanger, R., Güntherodt, H.-J., Güntherodt, G., Gambino, R.J., and Ruf, R.. Phys. Rev. Lett., 65 (1990) p. 247.10.1103/PhysRevLett.65.247Google Scholar
13. Soulen, R.J., et al. , Science, 282 (1998) p. 85; R.J. Soulen, M.S. Osofsky, B. Nadgorny, T. Ambrose, P. Boussard, S.F. Cheng, C.T. Tanaka, J. Nowack, J.S. Moodera, G. Laprade, A. Barry and M.D. Coey, J. Appl. Phys., 85 (1999) p. 4589.10.1126/science.282.5386.85Google Scholar
14. Dowben, P. A., Kim, Yoon Gi, Baral-tosh, S., Ramseyer, G. O., Hwang, Chanyong and Onellion, M., J. Appl. Phys., 67 (1990) p. 5658.10.1063/1.345917Google Scholar
15. Perkins, K., Hwang, C., Onellion, M., Kim, Yoon–Gi, and Dowben, P.A., Thin Solid Films 198 (1991) p. 317329.10.1016/0040-6090(91)90349-3Google Scholar
16. Mancini, D.C., Varma, S., Simons, J.K., Rosenberg, R.A., and Dowben, P.A., J. Vac. Sci. Technol. B8 (1990) p.18041807.10.1116/1.585163Google Scholar
17. Dowben, P.A. and Onellion, M., “Fabrication of CrO2 and Cobalt Doped CrO2 Films from Organometallic Complexes”, U.S. Patent Number 4,980,198 issued December 25, 1990.Google Scholar
18. Welipitiya, D., Borca, C. N., Dowben, P. A., Gobulukoglu, I., Jiang, H., Robertson, B. W. and Zhang, J.D., Mat. Res. Soc. Symp. Proc., 475 (1997) p. 257.10.1557/PROC-475-257Google Scholar
19. Borca, C. N., Welipitiya, D., Adenwalla, S. and Dowben, P. A., Phys. Low-Dim. Struct., 11/12 (1997) p.173.Google Scholar