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Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask

Published online by Cambridge University Press:  25 February 2011

N.K Dhar ,
P. Boyd ,
M. Martinka ,
J.D. Benson ,
J.H. Dinan  and
A.A. Iliadis
N.K Dhar
Affiliation:
U.S. Army Night Vision and Electro-Optics Directorate lort Belvoir, Virginia 22060
P. Boyd
Affiliation:
U.S. Army Night Vision and Electro-Optics Directorate lort Belvoir, Virginia 22060
M. Martinka
Affiliation:
U.S. Army Night Vision and Electro-Optics Directorate lort Belvoir, Virginia 22060
J.D. Benson
Affiliation:
U.S. Army Night Vision and Electro-Optics Directorate lort Belvoir, Virginia 22060
J.H. Dinan
Affiliation:
U.S. Army Night Vision and Electro-Optics Directorate lort Belvoir, Virginia 22060
A.A. Iliadis
Affiliation:
Electrical Engineering Department, University of Maryland, College Park, Maryland 20742
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Abstract

A cantilever shadow masking technique has been used for the first time to grow CdTe in recesses of GaAs wafers. The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were used to characterize these structures. An application to planar monolithic infrared focal plane arrays is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 359
Copyright
Copyright © Materials Research Society 1992

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References

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