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Selected Area Epitaxial Regrowth of Amorphous Si/(100) Si Structures by Laser Annealing

Published online by Cambridge University Press:  28 February 2011

A. Christou ,
C. Varmazis ,
T. Efthimiopoulos  and
C. Fotakis
A. Christou
Affiliation:
Research Center of Crete, Institute of Electronic Structure and Laser University of Crete, Physics Department, Iraklio, P. 0. Box 470, Crete, Greece
C. Varmazis
Affiliation:
Research Center of Crete, Institute of Electronic Structure and Laser University of Crete, Physics Department, Iraklio, P. 0. Box 470, Crete, Greece
T. Efthimiopoulos
Affiliation:
Research Center of Crete, Institute of Electronic Structure and Laser University of Crete, Physics Department, Iraklio, P. 0. Box 470, Crete, Greece
C. Fotakis
Affiliation:
Research Center of Crete, Institute of Electronic Structure and Laser University of Crete, Physics Department, Iraklio, P. 0. Box 470, Crete, Greece
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Abstract

Excimer laser KrF (248 nm) annealing at 93 mj/cm2 and 175 mJ/cm2 has been found to recrystallize amorphous silicon on (100)Si. The major impurities introduced by excimer laser annealing are carbon, while surface roughness remains as a major problem. Channel mobilities measured on MOSFETs processed on epitaxially regrown silicon were 98-115 cm2/v.s. Leakage currents between recrystallized silicon regions were 1-2 uA/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 53
Copyright
Copyright © Materials Research Society 1985

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