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Seedless Templated Growth of Hetero-Nanostructures for Novel Microelectronics Devices

Published online by Cambridge University Press:  31 January 2011

Francesca Iacopi ,
Rita Rooyackers ,
Roger Loo ,
Wendy Vanherle ,
Alexey Milenin ,
Kai Arstila ,
Anne Verhulst ,
Shotaro Takeuchi ,
Hugo Bender  and
Matty Caymax
...Show all authors
Francesca Iacopi
Affiliation:
[email protected], IMEC, Leuven, Belgium
Rita Rooyackers
Affiliation:
[email protected], IMEC, Leuven, Belgium
Roger Loo
Affiliation:
[email protected], IMEC, Leuven, Belgium
Wendy Vanherle
Affiliation:
[email protected], IMEC, Leuven, Belgium
Alexey Milenin
Affiliation:
[email protected], IMEC, Leuven, Belgium
Kai Arstila
Affiliation:
[email protected], IMEC, Leuven, Belgium
Anne Verhulst
Affiliation:
[email protected], IMEC, Leuven, Belgium
Shotaro Takeuchi
Affiliation:
[email protected], IMEC, Leuven, Belgium
Hugo Bender
Affiliation:
[email protected], IMEC, Leuven, Belgium
Matty Caymax
Affiliation:
[email protected], IMEC, Leuven, Belgium
Thomas Hantschel
Affiliation:
[email protected], IMEC, Leuven, Belgium
Anne Vandooren
Affiliation:
[email protected], IMEC, Leuven, Belgium
Philippe M Vereecken
Affiliation:
[email protected], IMEC, Leuven, Belgium
Stefan De Gendt
Affiliation:
[email protected], IMEC, Leuven, Belgium
Marc Heyns
Affiliation:
[email protected], IMEC, Leuven, Belgium
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Abstract

The feasibility of a templated seedless approach for growing segmented p-i-n nanowires –based diodes based on selective epitaxial growth is demonstrated. Such diodes are the basic structure for a TunnelFET device. This approach has the potential for being easily scalable at a full-wafer processing, and there is no theoretical limitation for control on nanowires growth and properties when scaling down their diameters, as opposed to an unconstrained vapor-liquid-solid growth. Moreover, Si/SixGe1-x hetero-structures are implemented, showing that this can improve the TFET ON current not only thanks to the lowered barrier for the band-to-band source-channel tunneling, but additionally thanks to its lower thermal budget for growth, allowing for better control of the abruptness of the doping profile at the source-channel tunneling interface.

Keywords

nanostructureelectronic materialcrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1178: Symposium AA – Semiconductor Nanowires–Growth, Size-Dependant Properties and Applications , 2009 , 1178-AA04-04
Copyright
Copyright © Materials Research Society 2009

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References

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