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Schottky-Diodes in Laser Recrystallized Polysilicon

Published online by Cambridge University Press:  15 February 2011

H. Schaber ,
H. Schelpmeier ,
W.M. Werner  and
D. Cutter
H. Schaber
Affiliation:
Siemens AG, Zentralbereich Technik, Otto-Hahn-Ring 6, 8 Munchen 83, F.R.G.
H. Schelpmeier
Affiliation:
Siemens AG, Zentralbereich Technik, Otto-Hahn-Ring 6, 8 Munchen 83, F.R.G. Siemens AG, Unternehmensbereich Bauelemente, Balanstr., 73, 8 München 80, F.R.G.
W.M. Werner
Affiliation:
Siemens AG, Zentralbereich Technik, Otto-Hahn-Ring 6, 8 Munchen 83, F.R.G. Siemens AG, Unternehmensbereich Bauelemente, Balanstr., 73, 8 München 80, F.R.G.
D. Cutter
Affiliation:
Siemens AG, Zentralbereich Technik, Otto-Hahn-Ring 6, 8 Munchen 83, F.R.G.
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Abstract

Schottky-diodes on laser recrystallized polycrystalline silicon are studied and compared to diodes fabricated on conventional, fine grained poly-Si. A strong dependence of reverse current on grain size is found and can be quantitatively explained by carrier generation at grain boundaries. In order to reduce the series resistance of the diodes, various methods to create a n+n doping profile in the recrystallized layer are investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 639
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

/ 1 / Gat, A. et al. , Appl. Phys. Lett. 33, 775 (1978).CrossRefGoogle Scholar
/ 2 / see e.g.: Gibbons, James F. in “Laser and Electron Beam Solid Interactions and Materials Processing”, edited by Gibbons, J.F., Hess, L.D., and Sigmon, T.W. (North Holland, New York, 1981) p. 449.Google Scholar
/ 3 / De Jong, Glenn A. et al. , ECS Extended Abstracts 80–2, 1201 (1980).Google Scholar
/ 4 / Werner, W.M., ECS Extended Abstracts 79–1, 456 (1979).Google Scholar
/ 5 / Sze, S.M., “Physics of Semiconductor Devices”, p. 389.Google Scholar
/ 6 / Card, H.C. and Hwang, W., IEEE Transactions on Electron Devices ED–27, 700 (1980).CrossRefGoogle Scholar
/ 7 / Ghosh, A.K. et al. , J. Appl. Phys. 51, 446 (1980).CrossRefGoogle Scholar
/ 8 / Lu, N.C.C. et al. , IEEE Electron Device Letters EDL–1, 38 (1980).CrossRefGoogle Scholar
/ 9 / Lee, K.F. et al. in “Laser and Electron Beam Processing of Materials”, edited by White, C.W. and Peercy, P.S. (Academic Press, New York, 1980), p. 632.CrossRefGoogle Scholar