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Schottky Contact Characterization of Thin, Excimer Laser Grown Gaas Oxides

Published online by Cambridge University Press:  26 February 2011

M.T. Schmidt ,
C.F. Yu ,
D.V. Podlesnik ,
E.S. Yang  and
R.M. Osgood Jr.
M.T. Schmidt
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY, 10027
C.F. Yu
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY, 10027
D.V. Podlesnik
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY, 10027
E.S. Yang
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY, 10027
R.M. Osgood Jr.
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY, 10027
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Abstract

Thin GaAs-oxide layers have been formed on GaAs (100) surfaces using deep UV light to enhance the oxidation reactions. Two different oxidation reactions were compared by using UV light of wavelengths below and above the O2 dissociation limit, viz, 248 nm and 193 nm respectively. For the light above the O2 dissociation limit which causes ozone formation, oxides formed by direct surface illumination were compared to oxides formed by illumination parallel to the GaAs surface. Metal contacts were deposited in situ to study the effect of the various thin oxides on the Schottky barrier height of contacts to GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 421
Copyright
Copyright © Materials Research Society 1998

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References

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