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Schottky Characteristics of Contacts to Complex Heterostructures

Published online by Cambridge University Press:  21 February 2011

S. Fujita ,
T. Noda ,
C. Nozaki ,
A. Wagai  and
Y. Ashizawa
S. Fujita
Affiliation:
Toshiba R&D Center, 1, Komukai-Toshiba-cho, Saiwaiku, Kawasaki, Japan
T. Noda
Affiliation:
Toshiba R&D Center, 1, Komukai-Toshiba-cho, Saiwaiku, Kawasaki, Japan
C. Nozaki
Affiliation:
Toshiba R&D Center, 1, Komukai-Toshiba-cho, Saiwaiku, Kawasaki, Japan
A. Wagai
Affiliation:
Toshiba R&D Center, 1, Komukai-Toshiba-cho, Saiwaiku, Kawasaki, Japan
Y. Ashizawa
Affiliation:
Toshiba R&D Center, 1, Komukai-Toshiba-cho, Saiwaiku, Kawasaki, Japan
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Abstract

Schottky characteristics of electrical contacts to complex heterostructures consisting of intermediate semiconductor layers with various thicknesses and underlying bulk layers have been studied. For Au/InAlAs/InP structures, I-V characteristics with thin InAlAs layers are found to be similar to those of a MIS tunneling diode, while those with thick InAlAs layers are found to be close to that of Au/InAlAs. For Au/InP/InAlAs structures, a substantial current barrier are found to be formed not at Au/InP but at InP/InAlAs heterojunction. Schottky barrier height in the case of strained intermediate layers of In1-xGaxP is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 469
Copyright
Copyright © Materials Research Society 1994

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