Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-17T16:55:16.675Z Has data issue: false hasContentIssue false
  • English
  • Français

Schottky Barrier Heights at Singe Crystal Metal Semiconductor Interfaces

Published online by Cambridge University Press:  26 February 2011

R. T. Tung
R. T. Tung*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Get access

Abstract

Electrical behavior at single crystal silicide-silicon interfaces was studied. Schottky barrier heights were determined for epitaxial NiSi2 and CoSi2 layers grown under ultrahigh vacuum conditions on (111), (100) and (110) surfaces of Si. A dependence of Schottky barrier heights on interface structure was observed. These results favor intrinsic mechanisms for Schottky barrier formation. The advantages of having homogeneous metal-semiconductor interfaces for the study of Schottky barrier mechanisms are pointed out. In particular, the present epitaxial silicide-silicon interfaces represent ideal candidates for detailed theoretical investigations based on experimentally obtained atomic structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 345
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Rhoderick, E. H., Metal-Semiconductor Contacts (Clarendon, New York, 1978).Google Scholar
[2] Brillson, L. J., Surf. Sci. Rep. 2, 123 (1982).CrossRefGoogle Scholar
[3] Williams, R. H., Contemp. Phys. 23, 329 (1982).CrossRefGoogle Scholar
[4] Schlüter, M., Thin Solid Films 93, 3 (1982).CrossRefGoogle Scholar
[5] Spicer, W. E., Lindau, I., Skeath, P. and Su, C. Y., J. Vac. Sci. Technol. 17, 1019 (1980).CrossRefGoogle Scholar
[6] Tung, R. T., Bean, J. C., Gibson, J. M., Poate, J. M. and Jacobson, D. C., Appl. Phys. Lett. 40, 684 (1982); and Thin Solid Films 93, 77 (1982).CrossRefGoogle Scholar
[7] Tung, R. T., Gibson, J. M., and Poate, J. M., Appl. Phys. Lett. 42, 888 (1983).CrossRefGoogle Scholar
[8] Gibson, J. M., Tung, R. T. and Poate, J. M., Mat. Res. Soc. Symp. Proc. 14, 395 (1983).CrossRefGoogle Scholar
[9] Tung, R. T., Gibson, J. M. and Poate, J. M., Phys. Rev. Lett. 50, 429 (1983).CrossRefGoogle Scholar
[10] Ishizaka, A., Nakagawa, K. and Shiraki, Y., 2nd International Symposium on Molecular Beam Epitaxy, Tokyo 1982, p. 183.Google Scholar
[11] Sze, S. M., Physics of Semiconductor Devices (Wiley-Interscience, New York, 1981).Google Scholar
[12] Andrews, J. M. and Lepselter, M. P., Solid State Electron. 13, 1011 (1970).CrossRefGoogle Scholar
[13] Norde, H., J. Appl. Phys. 50, 5052 (1979).CrossRefGoogle Scholar
[14] Tung, R. T., Phys. Rev. Lett. 52, 461 (1984) and J. Vac. Sci. Technol. B 2, 465 (1984).CrossRefGoogle Scholar
[15] Woodall, J. M., Pettit, G. D., Jackson, T. N., Lanza, C., Kavanagh, K. L. and Mayer, J. W., Phys. Rev. Lett. 51, 1783 (1983).CrossRefGoogle Scholar
[16] Chabal, Y. J., Hamann, D. R., Rowe, J. E. and Schlüter, M., Phys. Rev. B 25, 7598 (1982).CrossRefGoogle Scholar
[17] Schmid, P. E., Ho, P. S., Föll, H. and Tan, T. Y., Phys. Rev. B 28, 4593 (1983).CrossRefGoogle Scholar
[18] Harrison, T. R., Johnson, A. J., Tien, P. K. and Dayem, A. H., Appl. Phys. Lett. 41, 734 (1982).CrossRefGoogle Scholar
[19] Chiu, K. C. R., Poate, J. M., Rowe, J. E., Sheng, T. T. and Cullis, A. G., Appl. Phys. Lett. 38, 988 (1981).CrossRefGoogle Scholar
[20] Pimentel, C., Gibson, J. M. and Tung, R. T., to be published.Google Scholar
[21] Tung, R. T., Ng, K. K. and Gibson, J. M., to be published.Google Scholar
[22] Tung, R. T., Nakahara, S. and Boone, T., Appl. Phys. Lett. (1985).Google Scholar
[23] Gibson, J. M., Bean, J. C., Poate, J. M. and Tung, R. T., Appl. Phys. Lett. 41, 818 (1982).CrossRefGoogle Scholar
[24] Iwami, M., Okuno, K., Kamei, S., Ito, T., and Hiraki, A., Electrochem. Soc. Symp. Proc. 80–2, 102 (1980).Google Scholar
[25] Heine, V., Phys. Rev. A 138, 1689 (1965).CrossRefGoogle Scholar
[26] Louie, S. G. and Cohen, M. L., Phys. Rev. Lett. 35, 866 (1975).10.1103/PhysRevLett.35.866CrossRefGoogle Scholar
[27] Tersoff, J., Phys. Rev. Lett. 52, 465 (1984).CrossRefGoogle Scholar