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Schottky barrier height tuning by Hybrid organic-inorganic multilayers

Published online by Cambridge University Press:  29 April 2014

V. Torrisi ,
M. A. Squillaci ,
F. Ruffino ,
I. Crupi ,
M.G. Grimaldi  and
G. Marletta
V. Torrisi
Affiliation:
Laboratory for Molecular Surface and Nanotechnology (LAMSUN), Department of Chemical Sciences, University of Catania and CSGI, Viale A. Doria 6, 95125, Catania, Italy.
M. A. Squillaci
Affiliation:
Laboratory for Molecular Surface and Nanotechnology (LAMSUN), Department of Chemical Sciences, University of Catania and CSGI, Viale A. Doria 6, 95125, Catania, Italy.
F. Ruffino
Affiliation:
Dipartimento di Fisica ed Astronomia-Università di Catania, and MATIS IMM-CNR, via S. Sofia 64 95128 Catania, Italy.
I. Crupi
Affiliation:
Dipartimento di Fisica ed Astronomia-Università di Catania, and MATIS IMM-CNR, via S. Sofia 64 95128 Catania, Italy.
M.G. Grimaldi
Affiliation:
Dipartimento di Fisica ed Astronomia-Università di Catania, and MATIS IMM-CNR, via S. Sofia 64 95128 Catania, Italy.
G. Marletta
Affiliation:
Laboratory for Molecular Surface and Nanotechnology (LAMSUN), Department of Chemical Sciences, University of Catania and CSGI, Viale A. Doria 6, 95125, Catania, Italy.
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Abstract

Semiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I–V) measurements in the thickness range of 1-5 bilayers (BL).

At different number of layers, current-voltage (I–V) measurements were performed. Results showed a rectifying behavior. Junction parameters, such as barrier height (BH), from the I–V measurements for example for the PMMA-b-PS based Au/HyMLs/p-Si structure were obtained as 0.72±0.02 eV at 1BL and 0.64±0.02eV at 5BL. It was observed that the BH value of 0.61 eV obtained for the 5 BL PS based Au/HyMLs/p-Si structure was lower than the value of 0.68 eV of conventional Au/p-Si Schottky diodes. Thus, modification of the interfacial potential barrier for Au/p-Si diodes has been achieved using a thin MLs of different polymers based HyMls semiconductor.

Keywords

Auelectrical propertiespolymer
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1660: Symposium TT – Transport Properties in Nanocomposites , 2014 , mrsf13-1660-tt05-07
Copyright
Copyright © Materials Research Society 2014 

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References

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