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Scanning Tunneling Spectroscopy of Photoexcitations on a Nanosecond Time-Scale

Published online by Cambridge University Press:  15 February 2011

Todd G. Ruskell ,
Dong Chen  and
Dror Sarid
Todd G. Ruskell
Affiliation:
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
Dong Chen
Affiliation:
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
Dror Sarid
Affiliation:
Optical Sciences Center, University of Arizona, Tucson, Arizona 85721
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Abstract

Scanning tunneling spectroscopy of the high frequency response of photoexcited carriers in the layered structure semiconductors n–type MoS2 and p–type Wse2 is demonstrated using the beat frequency of the longitudinal modes of a HeNe laser at the tunneling junction. We analyze the optical response taking into account the effects of tip-induced band bending and surface states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 113
Copyright
Copyright © Materials Research Society 1995

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References

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