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Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex-on-Si Band Offsets

Published online by Cambridge University Press:  10 February 2011

Xiangdong Chen ,
Xiang-Dong Wang ,
Kou-Chen Liu ,
Dong-Won Kim  and
Sanjay Banerjee
Xiangdong Chen
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas, 78712
Xiang-Dong Wang
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas, 78712
Kou-Chen Liu
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas, 78712
Dong-Won Kim
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas, 78712
Sanjay Banerjee
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas, 78712
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Abstract

The band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situscanning tunneling spectroscopy (STS) was employed to measure the valence band offset of strained Si1−xGex-on-Si (100) for the first time. The valence band offsets of strained Si0.77Ge0.23and Si0.59Ge0.41on Si(100) are found to be 0.21eV and 0.36eV, respectively. The results are in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it is difficult to determine the conduction band edge at the interface of Si1−xGex/Si exactly, but the conduction band offset is found to be much smaller than the valence band offset

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 219
Copyright
Copyright © Materials Research Society 2000

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References

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