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Scanning Tunneling Microscopy Studies of GaAs Heteroepitaxial Growth on Si

Published online by Cambridge University Press:  28 February 2011

D. K. Biegelsen ,
R. D. Bringans ,
J. E. Northrup  and
L. E. Swartz
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. D. Bringans
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. E. Northrup
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
L. E. Swartz
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

We discuss the benefits and limitations of scanning tunneling microscopy (STM) for use in studies of the early stages of heteroepitaxy. We describe a system merging in vacuo an MBE, STM, XPS, LEED, etc. We present results for the initial stages of GaAs growth on vicinal Si(100), including As termination, Ga capping and subsequent 2D and 3D competition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 359
Copyright
Copyright © Materials Research Society 1990

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References

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