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Scanning Tunneling Microscopy and Spectroscopy of Semiconductor Surfaces

Published online by Cambridge University Press:  26 February 2011

J. E. Demuth ,
R. J. Hamers  and
R. M. Tromp
J. E. Demuth
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
R. J. Hamers
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
R. M. Tromp
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The principles of scanning tunneling microscopy and its application to study silicon surfaces are briefly reviewed. Scanning tunneling microscopy “topographs” contain both geometric information about the locations of atoms at the surface as well as about the charge densities of surface localized states. We describe procedures by which these two components can be distinguished so as to produce images of the surface electronic states with atomic resolution. This ability to spatially resolve the surface electronic structure provides new information to understand the local structure and nature of bonding, and in some cases can be used as a means to chemically image specific features of the surface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 1
Copyright
Copyright © Materials Research Society 1987

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References

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