Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-17T16:03:09.389Z Has data issue: false hasContentIssue false
  • English
  • Français

Scanning Probe Investigations of Cleaved Heterostructure Layers

Published online by Cambridge University Press:  10 February 2011

J. L. Ebel ,
T. E. Schlesinger  and
M. L. Reed
J. L. Ebel
Affiliation:
Solid State Electronics Directorate, Wright Laboratory, Wright-Patterson AFB, OH [email protected]
T. E. Schlesinger
Affiliation:
Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
M. L. Reed
Affiliation:
Solid State Electronics Directorate, Wright Laboratory, Wright-Patterson AFB, OH [email protected]
Get access

Abstract

We present differential oxidation rate effects in cleaved heterostructures containing GaAs, AlGaAs, InGaP and InGaAs measured by atomic force microscopy (AFM). AFM images of the cleaved structures are presented, along with step height measurements at the different material interfaces. These height differences are the result of differences in oxidation rates of the heterostructure layers. The method used to extract the small step-height information from the images is also presented. Typical step heights range from about one to twenty angstroms for the structures measured. We have also observed steps which mimic the oxidation steps, but which are not related to the epitaxially grown material structure. However, in these cases images of both sides of the cleaved pieces show inverse (rather than similar) topographies. We also present results of digital etching techniques used to enhance the step heights based on the same differential oxidation mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 251
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Slinkman, J. A. “Lateral Dopant Profiling in MOS Structures on a lOOnm Scale Using Scanning Capacitance Microscopy” IEEE Inernational Electron Devices Meeting 1990, 73.Google Scholar
2. Erickson, A.N., Sadwick, L., Neubauer, G., Kopanski, J., Adderton, D., Rodgers, M. “Quantitative Scanning Capacitance Microscopy Analysis of Two-Dimensional Dopant Concentrations at Nanoscale Dimensions” J. of Elee. Mat. 1996, 25(2), 301.Google Scholar
3. Feenstra, R. M., Yu, E. T., Woodall, J. M., Kirchner, P. D., Lin, C. J., and Pettit, G. D. “Cross-sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy” Appl. Phys. Lett. 1992, 61(7), 795.Google Scholar
4. Arakawa, M., Kishimoto, S., Mizutani, T. “Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices” Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, Yokohama 1996, 100.Google Scholar
5. Tamayo, J., Gonzalez, L., Gonzalez, Y., Garcia, R. “Compositional mapping of semiconductor structures by friction force microscopy” Appl Phys. Lett. 1996, 68(16), 2297.Google Scholar
6. DeSalvo, G., Ebel, J., Look, D., Bozada, C., Cerny, C., Dettmer, R., Gillespie, J., Havasy, C., Jenkins, T., Pettiford, C., Quach, T., Sewell, J., and Via, D. “Wet Chemical Digital Etching of GaAs at Room Temperature” submitted to the Journal of the Electrochemical Society.Google Scholar
7. DeSalvo, G., Ebel, J., Bozada, C., Cerny, C., Dettmer, R., Gillespie, J., Havasy, C., Jenkins, T., Nakano, K., Pettiford, C., Quach, T., Sewell, J., and Via, G. D. “Controlled Digital Etching of GaAs for Precise Gate Recess Formation in MESFET, HEMT, and pHEMT Device Fabrication” International Conference on GaAs Manufacturing Technology 1996, 29.Google Scholar
8. Reinhardt, F., Dwir, B., and Kapon, E. “Oxidation of GaAs/AlGaAs heterostructures studied by atomic force micriscopy in air” Appl. Phys. Lett. 1996, 68(22), 3168.Google Scholar