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Scanning Conductance Microscopy and High Frequency Scanning Gate Microscopy of Carbon Nanotubes and Polyethylene based Nanofibers

Published online by Cambridge University Press:  01 February 2011

Cristian Staii ,
Rui Shao ,
Nicholas J. Pinto ,
Dawn A. Bonnell  and
Alan T. Johnson Jr.
Cristian Staii
Affiliation:
Department of Physics and Astronomy and Laboratory for Research on the Structure of Matter, University of Pennsylvania, 209 South 33rd Street, Philadelphia, Pennsylvania 19104.
Rui Shao
Affiliation:
Department of Material Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, Pennsylvania 19104
Nicholas J. Pinto
Affiliation:
Department of Physics and Electronics, University of Puerto Rico, Humacao, Puerto Rico 00791
Dawn A. Bonnell
Affiliation:
Department of Material Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, Pennsylvania 19104
Alan T. Johnson Jr.
Affiliation:
Department of Physics and Astronomy and Laboratory for Research on the Structure of Matter, University of Pennsylvania, 209 South 33rd Street, Philadelphia, Pennsylvania 19104.
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Abstract

We present two new approaches that significantly enhance the analytic power of Scanning Conductance Microscopy (SCM) and Scanning Gate Microscopy (SGM). First, we present a quantitative model that explains the phase shifts observed in SCM, by considering the change in the total capacitance of the tip-sample-substrate system. We show excellent agreement with data on samples of (conducting) single wall nanotubes and insulating polyethylene oxide (PEO) nanofibers. This model is also used to determine the dielectric constant of PEO nanofibers, a general approach that can be extended to other dielectric nanowires. Second, we extend the SGM to frequencies up to 15MHz, and use it to image changes in the impedance of carbon nanotube field effect transistor (CNFET) circuits induced by the SGM-tip gate. We show that these measurements are consistent with a simple RC parallel circuit model of the CNFET, with a time constant of 0.3 μs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 838: Symposium O – Scanning Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials , 2004 , O9.8
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Bockrath, M., Markovic, N., Shepard, A., Tinkham, M., Gurevich, L., Kouwenhoven, L.P., Wu, M.W., and Sohn, L.L., Nano Letters 2, 187 (2002).Google Scholar
2. Zhou, Y., Freitag, M., Hone, J., Staii, C., Johnson, A.T., Pinto, N.J., and MacDiarmid, A.G., Appl. Phys. Lett. 83, 3800 (2003).Google Scholar
3. Freitag, M., Radosavljevic, M., Zhou, Y., and Johnson, A.T., Appl. Phys. Lett. 79, 3326, (2001).Google Scholar
4. Freitag, M., Johnson, A.T., Kalinin, S.V., and Bonnell, D.A., Phys. Rev. Lett. 89, 216801 (2002).Google Scholar
5. Staii, C., Johnson, A.T., and Pinto, N.J., Nano Lett. 4, 859 (2004).Google Scholar
6. Radosavljević, M., Freitag, M., Thadani, K.V., and Johnson, A.T., Nano Lett. 2, 761 (2002).Google Scholar
7. Shao, R., Kalinin, S.V., and Bonnell, D.A., Appl.Phys.Lett. 82, 1869 (2003).Google Scholar
8. Staii, C., Johnson, A.T., Shao, R., and Bonnell, D.A., Appl. Phys. Lett. submitted (2004).Google Scholar
9. Polymer Handbook, 4th ed.; John Wiley and Sons: New York, 1999, pp. V/13, V/100.Google Scholar
10. Takahagi, T., Saiki, A., Sakaue, H., and Shingubara, S., Jpn. J. Appl. Phys. 42, 157 (2003).Google Scholar