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Sb surfactant-mediated epitaxy of Ge on Si(113) studied by AFM, SEM and GIXRD

Published online by Cambridge University Press:  26 February 2011

Torben Clausen ,
Jan-Ingo Flege ,
Thomas Schmidt  and
Jens Falta
Torben Clausen
Affiliation:
[email protected], University of Bremen, Institute of Solid State Physics, Otto-Hahn-Allee, Bremen, N/A, 28359, Germany, 0049-(0)421-2182403, 0049-(0)421-2187318
Jan-Ingo Flege
Affiliation:
[email protected], Germany
Thomas Schmidt
Affiliation:
[email protected], Germany
Jens Falta
Affiliation:
[email protected]
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Abstract

We have investigated the Sb surfactant-mediated growth of Ge on Si(113) over the temperature range from 500°C to 700°C. The surface morphology, film thickness, interface roughness and strain state of the films have been determined by the use of scanning electron microscopy, atomic force microscopy and grazing incidence x-ray diffraction. After growth at temperatures between 500°C and 600°C smooth Ge films have been observed, which show a partial strain relaxation. However, increasing the temperature to 700°C, a rough surface with a high density of three-dimensional islands has been found.

Keywords

GeSbepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 901: Symposium R – Assembly at the Nanoscale – Toward Functional Nanostructured Materials , 2005 , 0901-Ra12-06
Copyright
Copyright © Materials Research Society 2006

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