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Sb Implantation in Si1–xGex/Si(100) Structures

Published online by Cambridge University Press:  28 February 2011

Z. Atzmon ,
M. Eizenberg ,
P. Revesz ,
J. W. Mayer  and
F. Schäffler
Z. Atzmon
Affiliation:
Dept. of Materials Eng. and Solid State Inst., Technion, Haifa, 32000, Israel
M. Eizenberg
Affiliation:
Dept. of Materials Eng. and Solid State Inst., Technion, Haifa, 32000, Israel
P. Revesz
Affiliation:
Dept. of Materials Sci. & Eng., Cornell Univ., Ithaca, N.Y. 14853
J. W. Mayer
Affiliation:
Dept. of Materials Sci. & Eng., Cornell Univ., Ithaca, N.Y. 14853
F. Schäffler
Affiliation:
Daimler-Benz Research Center, Sedanstr. 10, D.7900 Ulm, Federal Republic of, Germany
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Abstract

Solid phase epitaxial regrowth of Sb implanted strained Si1−x Gex alloy layers is reported. Two sets of Si1–xGex alloys with compositions of x=0.08 and x=0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb− ions at energies of 200 and 100 keV, respectively, and a dose of 1015cm−2. These alloys were heat-treated in a rapid thermal annealing system at temperatures of 525, 550 and 575°C for durations between 5 and 600 sec. The study of the solid phase epitaxial regrowth was performed by Rutherford backscattering in the channeling mode. The measurements show a significant difference in the regrowth mechanism between the two alloys. For the Si0.92Ge0.00 alloy a fast regrowth process (faster than for Sb implanted Si or Si implanted SiGe layers) occured with an activation energy of 2.92±0.2eV. For the Si0.02Ge0.10 alloy the regrowth took place in two steps: a) a very fast initial process over a short distance, b) a regrowth process of the majority of the amorphous layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 247
Copyright
Copyright © Materials Research Society 1992

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References

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