Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T15:29:01.129Z Has data issue: false hasContentIssue false
  • English
  • Français

RTP Temperature Measurements Using Si Grating Prepared by Laser Ablation for Large Diameter Wafer Applications

Published online by Cambridge University Press:  10 February 2011

C. W. Liu ,
M. H. Lee ,
C. Y. Chao ,
C. Y. Chen ,
C. C. Yang  and
Y. Chang
C. W. Liu
Affiliation:
Dept. of Electrical Engineering, National Taiwan University, Taipei, Taiwan
M. H. Lee
Affiliation:
Dept. of Electrical Engineering, National Taiwan University, Taipei, Taiwan
C. Y. Chao
Affiliation:
Dept. of Electrical Engineering, National Taiwan University, Taipei, Taiwan
C. Y. Chen
Affiliation:
Dept. of Electrical Engineering, National Taiwan University, Taipei, Taiwan
C. C. Yang
Affiliation:
Dept. of Electrical Engineering, National Taiwan University, Taipei, Taiwan
Y. Chang
Affiliation:
Dept. of Mechanical Engineering, Chung Cheng Inst. of Technology, Taoyuan, Taiwan
Get access

Abstract

Although a resolution of 1 °C of the grating temperature measurements has been demonstrated in RTP process[l], the conventional etching process to fabricate gratings on large diameter wafers makes it impractical for the production purpose. We, therefore, used the laser ablation technique to fabricate such Si gratings without any lithography and etching process. To increase the sensitivity of measurements, a large-angle diffracted beam was used by optimizing the incident angle and the grating period. As a result, an improvement of sensitivity could be obtained. The Si gratings were fabricated by the interference of two high power laser beams with the wavelength of 266 nm. The grating period was determined by interference condition, and could be varied from 180 to 550 nm, which would be beneficial to increase the measurement sensitivity. HeNe laser was used as the light source to measure the thermal expansion of grating periods for the temperature measurements. The temperature measurement of Si wafer from room temperature to 800 °C was demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 121
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zaidi, S. H., Brueck, S. R. J., and McNeil, J. R., J. Vac. Sci. Technol. B 10, 166 (1992).Google Scholar
2. Marcy, D. L., Chial, S., Benes, M., and Sturm, J. C., Mat. Res. Soc. Symp. Proc. 470, 23(1997).Google Scholar
3. Donnelly, D. M. and McCaulley, J. A., J. Vac. Sci. Technol. A 8, 84(1990).Google Scholar
4. Chao, C. Y., Chen, C. Y., Liu, C. W., Chang, Y., and Yang, C. C., Appl. Phys. Lett. 71, 2442(1997).Google Scholar
5. Strass, A., Hansch, W., Kaesen, F., Neubecker, A., Bieringer, P., Fisher, A., and Eisele, I., Technical Digest, the 7th international symposium on silicon molecular beam epitaxy, Banff, Canada, 203(1997).Google Scholar
6. Okada, Y. and Tokumaru, Y., J. Appl. Phys. 56, 314(1984)Google Scholar