Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T02:27:37.500Z Has data issue: false hasContentIssue false
  • English
  • Français

RTP Calibration Wafer using thin-film Thermocouples

Published online by Cambridge University Press:  10 February 2011

K. G. Kreider ,
D. P. Dewitt ,
B. K. Tsai ,
F. J. Lovas  and
D. W. Allen
K. G. Kreider
Affiliation:
Chemical Science and Technology Laboratory, Physics Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, [email protected]
D. P. Dewitt
Affiliation:
Physics Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899
B. K. Tsai
Affiliation:
Physics Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899
F. J. Lovas
Affiliation:
Physics Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899
D. W. Allen
Affiliation:
Chemical Science and Technology Laboratory, Physics Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899
Get access

Abstract

Rapid thermal processing (RTP) is a key technology for the cluster tool, single wafer manufacturing approach that is used to produce integrated circuits at lower cost with reduced line widths and thermal budgets. However, various problems associated with wafer temperature measurements and dynamic temperature uniformity have hindered the widespread use of RTP in semiconductor device manufacturing. The current technology for calibrating the radiometers employs a thermocouple instrumented wafer. We have accomplished improvements in the accuracy of these measurements through the use of thin-film thermocouples and the new Pt/Pd thermocouple system. These new calibration wafers can reduce the uncertainty in wafer temperature measurement technology by (1) reducing the perturbation due to heat transfer at the thermocouple junctions and (2) replacing conventional thermocouples with the superior Pt/Pd system. The thin-film thermocouples were calibrated using proof specimens fabricated with the Si 200 mm wafers and evaluated in the NIST RTP sensor test bed.

The commercial type K thermocouples yielded temperature measurements within 4 °C of the thin-film Rh/Pt and Pt/Pd thermocouples on the 200 mm calibration wafer between 725°C and 875 °C. The Pt/Pd thin-film thermocouples proved less durable than the Rh/Pt thin films and the limitations of these systems are discussed. We also present a comparison of the radiometric measurements with the thermocouple measurements using a model estimating the wafer temperature from its spectral radiance temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 87
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Moslehi, M.M., Najm, H., Velo, L., Yeakley, R., Kuehn, J., Dostalik, B., and Yin, D., Mat. Res. Symp. Proceedings, Vol.224, Mat. Res. Soc., Pittsburgh, PA, 1991, 143–157.Google Scholar
2. Moslehi, M.M., Paranjpe, A., Velo, L.A., and Kuehn, J., Solid State Tech., May 1994, 37–45.Google Scholar
3. Barna, G.G., Moslehi, M.M., and Yong, J.L., Solid State Technology, Apr. 1994, 57–61.Google Scholar
4. Wortman, J.J., Houser, M.C., Ozturk, J.R., and Sorrell, F.Y., Proceedings of Third International Symposium on ULSI, 1991, 528–540.Google Scholar
5. Colgan, E.G., Cabral, C., Clevenger, L.A., and Harper, J.M., Mat. Res. Soc. Proc.V 387, 1995, 49–55.Google Scholar
6. Brueck, S.R.J., Zaida, S.H., and Lang, M.K., Mat. Res. Soc. Proc., V 303, 1993, 117–125.Google Scholar
7. Brueck, S.R.J., Zaida, S.H., and Lang, M.K., Mat. Res. Soc. Proc., V 387, 1995, 125–131.Google Scholar
8. Peuse, B., Yam, M., Bahl, S., and Elia, C., Proceedings of 5th Int. Conf. On Advanced Thermal Processing of Semiconductors, RTP '97, Round Rock, TX, 358–365.Google Scholar
9. Shietinger, C., Adams, B., and Yarling, C., Mat. Res. Soc. Proc., V 224, 1991, 23–28.Google Scholar
10. Fiory, A.T., Shietinger, C.S., Adams, B.A., and Yarling, C., Mat. Res. Soc. Proc., V 303, 1993, 139–145.Google Scholar
11. Xing, G.C., Wang, Z.H., Shietinger, C.S., Wasserman, Y., and Sun, M.H., Mat. Res. Soc. Proc., V 338, 1995, 119–125.Google Scholar
12. DeWitt, D.P., Sorrell, F.Y., and Elliot, J.K., Mat. Res. Soc. Proc., V 470, 1997, 3–15.Google Scholar
13. Timans, P.J., J. Appl. Phys., 74, 1993, 6353–6360.Google Scholar
14. Rogner, H., Timans, P.J., and Amed, H., Appl. Phys. Lett., 69, 1996, 2190–2.Google Scholar
15. Bums, G.W., and Ripple, D.C., Proceedings of 6th Int'l. Symp. On Temperature and Thermal Measurements in Industry, TEMPMEKO '96, Turin, Italy, 1996.Google Scholar
16. Battuello, M., Ali, K., and Girard, F., Proceedings of 6th Int'l Symp. On Temperature and Thermal Measurements in Industry, TEMPMEKO '96, Turin, Italy, 1996.Google Scholar
17. Kreider, K.G. and DiMeo, F., Proc. Of Fifth International Conf. On Advanced Thermal Processing of Semiconductors, RTP '97, Round Rock, TX, 1997, 105–113.Google Scholar
18. Kreider, K.G., Ripple, D.C., and DeWitt, D.P., Proceedings of 44th International Instrumentation Symposium, Reno, NV, ISA, Research Triangle Park, NC, May, 1998, 561–570 Google Scholar
19. Ripple, D.C., Bums, G.W., and Battuello, M., Proceedings of NCSL 1997 Workshop and Symposium, Atlanta, GA, 1997, 481–488.Google Scholar
20. Identification of commercial equipment and materials in this paper does not imply recommendation of endorsement by the National Institute of Standards and Technology, nor does it imply that the equipment and materials are necessarily the best available for the purpose.Google Scholar
21. Tsai, B.K., Lovas, F.J., DeWitt, D.P., Kreider, K.G., Bums, G.W., and Allen, D.W., Proc.of Fifth International Conf. On Advanced Thermal Processing of Semiconductors, RTP'97, Round Rock, TX, 1997, 340–346.Google Scholar
22. Lovas, F.J., Tsai, B.K., and Gibson, C.E., Private communications.Google Scholar
23. Barin, I.,, Thermochemical Data of Pure Substances, VCH Verlagsgesellscraft mbH, Weinheim, FRG, 1989, 1168.Google Scholar
24. Roeser, W.F., and Wensel, H.T. in Temperature; Its Measurement and Control in Science and Industry, _Reinhold Pub, New York, NY, 1941, 1293.Google Scholar
25. Vandenabeele, P. and Renken, W., Mat. Res. Soc. Symp. Proc., V 470, 1997, 17–28.Google Scholar
26. DeWitt, D.P., and Nutter, G.D., (Eds.), Theory and Practice of Radiation Thermometry, John Wiley & Sons, 1987, pp 41.Google Scholar