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Rowth of Y-CUT LiNbO3 Layers on (1102) Al2O3

Published online by Cambridge University Press:  25 February 2011

H. Robinson
Affiliation:
Dept. of Electrical and Electronic Engineering, University College, London, England
H.J. Milledge
Affiliation:
Crystallography and Mineral Physics Unit, Dept. of Geological Sciences, University College, London, England
C.W. Pitf
Affiliation:
Dept. of Electrical and Electronic Engineering, University College, London, England
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Abstract

It has been found that y-cut LiNbO3 heteroepitaxial layers of good quality (as determined from X-ray diffraction patterns) can be obtained by radio frequency sputtering on noncrystallographic (vicinal) substrate surfaces approximating (1102) of Al2O3, in accord with the results concerning (100) Si growth on A12O3.

Such material may find application in optical modulators monolithically integrated on to silicon-on-sapphire (SOS) circuits.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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