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Published online by Cambridge University Press: 25 February 2011
It has been found that y-cut LiNbO3 heteroepitaxial layers of good quality (as determined from X-ray diffraction patterns) can be obtained by radio frequency sputtering on noncrystallographic (vicinal) substrate surfaces approximating (1102) of Al2O3, in accord with the results concerning (100) Si growth on A12O3.
Such material may find application in optical modulators monolithically integrated on to silicon-on-sapphire (SOS) circuits.