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Room-Temperature Operation of Vertical-Cavity Surface-Emitting Laser on Si Substrate

Published online by Cambridge University Press:  21 February 2011

Takashi Egawa ,
Yoshiaki Hasegawa ,
Takashi Jimbo  and
Masayoshi Umeno
Takashi Egawa
Affiliation:
Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Yoshiaki Hasegawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Takashi Jimbo
Affiliation:
Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Masayoshi Umeno
Affiliation:
Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

AlGaAs/GaAs single-quantum-well (SQW) vertical-cavity surface-emitting laser diodes (VCSELDs) with 20 pairs of AlAs (71 nm)/GaAs (59 nm) distributed Bragg reflectors (DBRs) were grown on Si substrates by metalorganic chemical vapor deposition using the conventional two-step growth technique. The measured reflectivity of the 20 pairs of AlAs/GaAs DBRs was 93 % at the wavelength of 860 nm. The AlGaAs/GaAs SQW VCSELD on Si exhibited a threshold current of 79 mA and a threshold current density of 4.9 kA/cm2 under pulsed condition at room temperature. The emission wavelength was 840.3 nm with the full width at half maximum of 0.28 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 67
Copyright
Copyright © Materials Research Society 1994

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References

1 Choi, H. K., Turner, G. W., Windhorn, T. H. and Tsaur, B.-Y., IEEE Electron Device Lett. EDL–7, 500(1986).Google Scholar
2 Egawa, T., Jimbo, T. and Umeno, M., Jpn. J. Appl. Phys. 32,650 (1993).Google Scholar
3 Egawa, T., Jimbo, T. and Umeno, M., IEEE Photon. Technol. Lett. 4, 612 (1992).Google Scholar
4 Choi, H. K., Wang, C. A. and Karam, N. H., Appl. Phys. Lett. 59, 2634 (1991).Google Scholar
5 Iga, K., Koyama, F. and Kinoshita, S., IEEE J. Quantum Electron. QE–24, 1845 (1988).Google Scholar
6 Deppe, D. G., Chand, N., van der Ziel, J. P. and Zydzik, G. J., Appl. Phys. Lett. 56, 740 (1990).Google Scholar
7 Jewell, J. L., Harbison, J. P., Schere, A., Lee, Y. H. and Florez, L. T., IEEE J. Quantum Electron. 27, 1332 (1991).Google Scholar
8 Yamaguchi, M., Tachikawa, M., Sugo, M., Kondo, S. and Itoh, Y., Appl. Phys. Lett. 56, 27 (1990).Google Scholar
9 Egawa, T., Soga, T., Jimbo, T. and Umeno, M., IEEE J. Quantum Electron. QE–27, 1798 (1991).Google Scholar
10 Egawa, T., Jimbo, T. and Umeno, M., Appl. Phys. Lett. 61, 2923 (1992).Google Scholar
11 Wang, Y. H., Tai, K., Hsieh, Y. F., Chu, S. N. G., Wynn, J. D. and Cho, A. Y., Appl. Phys. Lett. 57, 1613 (1990).Google Scholar