Article contents
Room-Temperature Migration of Ion-Implanted Boron in Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
Room temperature migration and clustering behaviour of implanted boron into silicon has been investigated by performing ion implantation of the 11B isotope into MBE-grown in-situ 10B-doped epitaxial Si-layers. We, for the first time, show that a fraction of the implanted boron migrates very deep into the bulk of the Si with substitutional 10B acting as trap centers for the migrating 11B.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1997
References
REFERENCES
- 2
- Cited by