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Room-Temperature Defect Tolerance of Shape Engineered Quantum Dot Structures

Published online by Cambridge University Press:  01 February 2011

Matthew Lamberti ,
Alex Katsnelson ,
Michael Yakimov ,
Gabriel Agnello ,
Vadim Tokranov  and
Serge Oktyabrsky
Matthew Lamberti
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany - SUNY, 251 Fuller Road, Albany, NY 12203, U.S.A.
Alex Katsnelson
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany - SUNY, 251 Fuller Road, Albany, NY 12203, U.S.A.
Michael Yakimov
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany - SUNY, 251 Fuller Road, Albany, NY 12203, U.S.A.
Gabriel Agnello
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany - SUNY, 251 Fuller Road, Albany, NY 12203, U.S.A.
Vadim Tokranov
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany - SUNY, 251 Fuller Road, Albany, NY 12203, U.S.A.
Serge Oktyabrsky
Affiliation:
School of NanoSciences and NanoEngineering, University at Albany - SUNY, 251 Fuller Road, Albany, NY 12203, U.S.A.
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Abstract

A quantum dot (QD) medium is expected to demonstrate superior performance in various devices when compared with quantum wells (QWs). One area of interest has been the improved defect tolerance of QD media, though it was demonstrated at low temperatures so far. In this study, the defect tolerance of shape-engineered QD structures is compared with that of a QW structure at temperatures up to 300 K. To create high defect densities both QD and QW structures were irradiated with high energy (1.5 MeV) protons (with doses up to 3×1014 cm-2). Then, the relative luminescence efficiency was measured by variable temperature photoluminescence. The shape-engineered QD structure withstood two orders of magnitude higher defect density than the QWs at room temperature. This improvement is correlated with the activation energy for thermal evaporation of 390 meV, acquired through a kinetic model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z5.36
Copyright
Copyright © Materials Research Society 2004

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References

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