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Room Temperature Uv Laser Continuous Direct Writing of Al From Tma

Published online by Cambridge University Press:  26 February 2011

J.E. Bouree  and
J. Flicstein
J.E. Bouree
Affiliation:
CNRS, Laboratoire de Physique des Solides, 92195 MEUDON, FRANCE
J. Flicstein
Affiliation:
CNET, Laboratoire de Bagneux, 92220 BAGNEUX, FRANCE
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Abstract

Aluminum lines have been drawn at a writing speed of 3.8 μm/s on (100) p-type Si by UV laser-assisted chemical processing, from a flow of TMA diluted in H2. These results are the experimental proof of direct writing at room temperature due to a single-step deposition process induced by a single light source. The useful (30 μQ-cm) ohmic-type resistivity obtained depends strongly on the photolytic process parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 55
Copyright
Copyright © Materials Research Society 1998

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References

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