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Room Temperature Negative Differential Resistance in Nanoscale Molecular

Published online by Cambridge University Press:  21 March 2011

J. Chen ,
W. Wang ,
M. A. Reed ,
A. M. Rawlett ,
D. W. Price  and
J. M. Tour
J. Chen
Affiliation:
Department of Electrical Engineering, Yale University, P.O. Box 208284, New Haven, CT 06520
W. Wang
Affiliation:
Department of Electrical Engineering, Yale University, P.O. Box 208284, New Haven, CT 06520
M. A. Reed
Affiliation:
Department of Electrical Engineering, Yale University, P.O. Box 208284, New Haven, CT 06520
A. M. Rawlett
Affiliation:
Center for Nanoscale Science and Technology, Rice University, MS 222, 6100 Main Street, Houston, TX 77005
D. W. Price
Affiliation:
Center for Nanoscale Science and Technology, Rice University, MS 222, 6100 Main Street, Houston, TX 77005
J. M. Tour
Affiliation:
Center for Nanoscale Science and Technology, Rice University, MS 222, 6100 Main Street, Houston, TX 77005
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Abstract

Molecular devices utilizing active self-assembled monolayer (SAM) (containing nitroamine (2′-amino-4-ethynylphenyl-4′-ethynylphenyl-5′-nitro-1-benzenethiolate) and nitro (4-ethynylphenyl-4′-ethynylphenyl-2′-nitro-1-benzenethiolate) redox center) as the active component are reported. Current-voltage measurements of the devices exhibited negative differential resistance at room temperature and an on-off peak-to-valley ratio in excess of 1000:1 at low temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 582: Symposium H – Molecular Electronics , 1999 , H3.2
Copyright
Copyright © Materials Research Society 1999

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References

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