Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T15:37:18.790Z Has data issue: false hasContentIssue false

Room Temperature led's for the MID-Infrared Based on in(AS,SB) Strained Layer Superlattices

Published online by Cambridge University Press:  10 February 2011

C. C. Phillips
Affiliation:
Solid State Group, Physics Department, Imperial College, London SW7 2BZ
P. J. P. Tang
Affiliation:
Solid State Group, Physics Department, Imperial College, London SW7 2BZ
M. J. Puliin
Affiliation:
Solid State Group, Physics Department, Imperial College, London SW7 2BZ
H. R. Hardaway
Affiliation:
Solid State Group, Physics Department, Imperial College, London SW7 2BZ
S. J. Chung
Affiliation:
Solid State Group, Physics Department, Imperial College, London SW7 2BZ
W. T. Yuen
Affiliation:
Solid State Group, Physics Department, Imperial College, London SW7 2BZ
R. A. Stradling
Affiliation:
Solid State Group, Physics Department, Imperial College, London SW7 2BZ
Y. B. Li
Affiliation:
Solid State Group, Physics Department, Imperial College, London SW7 2BZ
L. Hart
Affiliation:
Interdisciplinary Research Centre for Semiconductor Materials, Imperial College, London SW7 2BZ
Get access

Abstract

Arsenic-rich InAs/InAs1−x Sbx strained-layer superlattices (SLS's) are studied in time-resolved optical, and CW magneto-optical spectroscopies. A pronounced type-II offset, with electrons confined to the alloy layers, is found. High radiative efficiencies at wavelengths well into the mid-IR, and the suppression of Auger recombination yield LED's operating at 3–10 μm. Present room temperature powers are ∼30 μW, probably limited by inadequate carrier confinement.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zhang, Y H, Le, H Q, Chow, D H and Miles, R H. Inst. Phys. Coni Series 144, 3640 (1995).Google Scholar
2. Kurtz, S R, Biefield, R M, Dawson, L R, Baucom, K C and Howard, A J. Appl. Phys. Lett. 64 (7), 812814(1994).Google Scholar
3. Yakovlev, Yu. P, Baranov, A N, Imendov, A N, Popov, A A and Sherstnev, V V. J. de Physique III 4, C4671, (1994).Google Scholar
4. Le, H Q, Turner, G W, Eglash, S J, Choi, H K and Coppeta, D A. Appl. Phys. Lett. 64 (2), 152154, (1994).Google Scholar
5. Adaraliev, M, Bresler, M S, Guslev, O B, Karandashov, S A, Matveev, B A, Stus', M N, Talalakin, G N and Zotova, N V. Semicon. Sei. Tech. 10 151156 (1995).Google Scholar
6. Malin, J I, Felix, C L, Meyer, J R, Hoffman, C A, Pinto, J F, Lin, C.-H., Chang, P.C., Murray, S. J. and Pei, S.-S.. Electron. Lett. 32, (17), 15931595. (1996)Google Scholar
7. Faist, J, Capasso, F, Sirtori, C, Sivco, D L, Baillargeon, J N., Hutchinson, A L, Chu, S-N G, and Cho, A Y. App. Phys. Lett. 68 (26), 36803682, (1996).Google Scholar
8. Malin, J I, Meyer, J R, Felix, C L, Lindle, J R, Goldberg, L, Hoffman, C A, Bartoli, F J, Lin, C-H, Chang, P C, Murry, S J, Yang, R Q and Pei, S-S. Appl. Phys. Lett. 68 (21), 29762978 (1996).Google Scholar
9. Tang, P J P, Puliin, M J, Chung, S J, Phillips, C C, Stradling, R A, Norman, A G, Li, Y B and Hart, L. Semicond. Sci. and Technol. 10, 11771180(1995).Google Scholar
10. Smith, S N, Phillips, C C, Thomas, R H, Stradling, R A, Murdin, B N and Pidgeon, C R. Semicond. Sci and Technol. 7, 900906 (1992).Google Scholar
11. Fang, Z M, Ma, K Y, Jaw, D H, Cohen, R M and Stringfellow, G B. J. Appl. Phys. 67 (11) 70347039(1990).Google Scholar
12. Rogalski, A, Prog. Quant. Electr. 13, 191231 (1989).Google Scholar
13. Tang, P J P, Norman, A, Stradling, R A and Phillips, C C. Semicond. Sci. and Tech. 8, 21352142(1993).Google Scholar
14. Tang, P J P, Puliin, M J and Phillips, C C Accepted for Phys. Rev. B. 55, (7) (15th Feb 1997)Google Scholar
15. Li, Y B, Bain, D J, Hart, L, Livingstone, M, Ciesla, C M, Puliin, M J, Tang, P J P, Yuen, W T, Galbraith, I, Phillips, C C, Pidgeon, C R and Stradling, R A. Accepted for Phys. Rev. B. 55, (7), (15th Feb. 1997).Google Scholar
16. Tang, P.J.P., Puliin, M.J., Li, Y.B., Phillips, C.C., Stradling, R.A., Chung, S. J., Yuen, W.T., Hart, L., Bain, D. J. and Galbraith, I. App. Phys. Lett. 69, (17), 25012503 (1996).Google Scholar
17. Kurtz, S R and Biefield, R M. Appl. Phys. Lett. 66,(3), 364366, (1995).Google Scholar
18. Vodopyanov, K L, Graener, H, Phillips, C C and Tate, T J. J. Phys. D: Appl. Phys. 73, (2) 627632(1993).Google Scholar
19. Ciesla, C M, Murdin, B N, Pidgeon, C R, Stradling, R A, Phillips, C C, Livingstone, M, Galbraith, I, Jarosznyski, D A, Langerak, C J M, Tang, P and Puliin, M. J. Appl. Phys. 80, (5), 29942997. (1996).Google Scholar