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Room Temperature Growth of Indium Tin Oxide Films by Ultraviolet-Assisted Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

V. Craciun ,
D. Craciun ,
Z. Chen ,
J. Hwang  and
R.K. Singh
V. Craciun
Affiliation:
Materials Science & Engineering, University of Florida, Gainesville, FL 32611
D. Craciun
Affiliation:
National Institute for Laser, Plasma and Radiation Physics, Bucharest, Romania
Z. Chen
Affiliation:
Materials Science & Engineering, University of Florida, Gainesville, FL 32611
J. Hwang
Affiliation:
Physics Department, University of Florida, Gainesville, FL 32611
R.K. Singh
Affiliation:
Materials Science & Engineering, University of Florida, Gainesville, FL 32611
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Abstract

The characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Corning glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 277
Copyright
Copyright © Materials Research Society 2000

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