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Room Temperature Band-Edge Luminescence from Silicon Grains Prepared by the Recrystallization of Mesoporous Silicon

Published online by Cambridge University Press:  15 February 2011

Karen L. Moore ,
Leonid Tsybeskov ,
Philippe M. Fauchet  and
Dennis G. Hall
Karen L. Moore
Affiliation:
University of Rochester, The Institute of Optics, Rochester, NY 14627
Leonid Tsybeskov
Affiliation:
University of Rochester, Department of Electrical Engineering, Rochester, NY 14627
Philippe M. Fauchet
Affiliation:
University of Rochester, The Institute of Optics, Rochester, NY 14627 University of Rochester, Department of Electrical Engineering, Rochester, NY 14627
Dennis G. Hall
Affiliation:
University of Rochester, The Institute of Optics, Rochester, NY 14627
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Abstract

Room-temperature photoluminescence (PL) peaking at 1.1 eV has been found in electrochemically etched mesoporous silicon annealed at 950°C. Low-temperature PL spectra clearly show a fine structure related to phonon-assisted transitions in pure crystalline silicon (c-Si) and the absence of defect-related (e.g.P-line) and impurity-related (e.g.oxygen, boron) transitions. The maximum PL external quantum efficiency (EQE) is found to be better than 0.1% with a weak temperature dependence in the region from 12K to 400K. The PL intensity is a linear function of excitation intensity up to 100 W/cm2. The PL can be suppressed by an external electric field ≥ 105 V/cm. Room temperature electroluminescence (EL) related to the c-Si band-edge is also demonstrated under an applied bias ≤ 1.2 V and with a current density ≈ 20 mA/cm2. A model is proposed in which the radiative recombination originates from recrystallized Si grains within a non-stoichiometric Si-rich silicon oxide (SRSO) matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 517
Copyright
Copyright © Materials Research Society 1997

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References

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