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Room and Cryogenic Temperature Operation of 280 nm Deep Ultraviolet Light Emitting Diodes

Published online by Cambridge University Press:  11 February 2011

Maxim Shatalov ,
Vinod Adivarahan ,
Jian Ping Zhang ,
Ashay Chitnis ,
Shuai Wu ,
Radhika Pachipulusu ,
Vasavi Mandavilli  and
M. Asif Khan
Maxim Shatalov
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Vinod Adivarahan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Jian Ping Zhang
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Ashay Chitnis
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Shuai Wu
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Radhika Pachipulusu
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
Vasavi Mandavilli
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
M. Asif Khan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, U.S.A.
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Abstract

We present a study of the electrical and optical characteristics of 280 nm emission deep ultraviolet light emitting diodes (LED) at room and cryogenic temperatures. At low bias the defect assisted carrier tunneling primarily determines the current conduction. The room-temperature spectral performance and optical power are limited mostly by pronounced deep level defect assisted radiative and non-radiative recombination as well as poor electron confinement in the active region. At temperatures below 100 K the electroluminescence peak intensity increases by more than one order of magnitude due to suppression of non-radiative recombination channels indicating that with a proper device design and improved material quality, milliwatt power 280 nm LED are viable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L7.3
Copyright
Copyright © Materials Research Society 2003

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References

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