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The Role of Vacancies and Interstitials in Transient Enhanced Diffusion of Arsenic Implanted into Silicon

Published online by Cambridge University Press:  15 February 2011

D. Venables ,
V. Krishnamoorthy ,
H.- J. Gossmann ,
A. Lilak ,
K. S. Jones  and
D. C. Jacobson
D. Venables
Affiliation:
Department of Materials Science and Eng., North Carolina State University, Raleigh, NC 27695–7907, [email protected]
V. Krishnamoorthy
Affiliation:
Department of Materials Science and Eng., University of Florida, Gainesville, FL 32611
H.- J. Gossmann
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974.
A. Lilak
Affiliation:
Department of Electrical Eng., University of Florida, Gainesville, FL 32611
K. S. Jones
Affiliation:
Department of Materials Science and Eng., University of Florida, Gainesville, FL 32611
D. C. Jacobson
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974.
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Abstract

Boron and antimony doped superlattices (DSLs) were implanted with arsenic at 40 keV to doses of 2×1014 cm−2, 5×1015 cm−2 and 2×1016 cm−2. Increasing the arsenic dose above 5×1015 cm−2 resulted in a reduction in the extent of arsenic transient enhanced diffusion (TED) following annealing at 700°C, 16 hr. Concurrent with this reduction in TED was a reduction in the number of free interstitials beyond the end-of-range, as measured by the boron diffusion enhancement in the doped superlattices. No enhancement in antimony diffusivity was observed in this region, indicating that vacancies play no direct role in the diffusion of arsenic in this region, although an indirect role for vacancies as recombination centers for mobile interstitials is not precluded by these experiments. We conclude that interstitials dominate arsenic diffusion in the end-of-range region and beyond. Interpretation of the DSL data in the projected range region is complicated by Fermi level and segregation effects and no definitive conclusion can be reached about the point defect populations in this region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 315
Copyright
Copyright © Materials Research Society 1997

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References

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